Inter-poly dielectric in a shielded gate MOSFET device
First Claim
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1. An apparatus, comprising:
- a shield dielectric disposed within a trench aligned along an axis and disposed within an epitaxial layer of a semiconductor;
a shield electrode disposed within the shield dielectric and aligned along the axis;
a first inter-poly dielectric having a portion intersecting a plane orthogonal to the axis, the plane intersecting the shield electrode;
a second inter-poly dielectric having a portion intersecting the plane and disposed between the first inter-poly dielectric and the shield electrode;
a gate dielectric having a first portion disposed directly on the first inter-poly dielectric; and
a gate electrode disposed above the shield electrode and insulated from the shield electrode by at least the gate dielectric, the gate dielectric having a second portion disposed directly in contact with the gate electrode and disposed directly in contact with a sidewall of the trench.
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Abstract
In one general aspect, an apparatus can include a shield dielectric disposed within a trench aligned along an axis within an epitaxial layer of a semiconductor, and a shield electrode disposed within the shield dielectric and aligned along the axis. The apparatus can include a first inter-poly dielectric having a portion intersecting a plane orthogonal to the axis where the plane intersects the shield electrode, and a second inter-poly dielectric having a portion intersecting the plane and disposed between the first inter-poly dielectric and the shield electrode. The apparatus can also include a gate dielectric having a portion disposed on the first inter-poly dielectric.
21 Citations
22 Claims
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1. An apparatus, comprising:
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a shield dielectric disposed within a trench aligned along an axis and disposed within an epitaxial layer of a semiconductor; a shield electrode disposed within the shield dielectric and aligned along the axis; a first inter-poly dielectric having a portion intersecting a plane orthogonal to the axis, the plane intersecting the shield electrode; a second inter-poly dielectric having a portion intersecting the plane and disposed between the first inter-poly dielectric and the shield electrode; a gate dielectric having a first portion disposed directly on the first inter-poly dielectric; and a gate electrode disposed above the shield electrode and insulated from the shield electrode by at least the gate dielectric, the gate dielectric having a second portion disposed directly in contact with the gate electrode and disposed directly in contact with a sidewall of the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An apparatus, comprising:
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a shield dielectric disposed within a trench aligned along an axis within an epitaxial layer of a semiconductor; a shield electrode disposed within the shield dielectric and aligned along the axis; an inter-poly dielectric having a portion disposed below a top surface of the shield electrode and intersecting a plane orthogonal to the axis, the plane intersecting the shield electrode, the portion of the shield dielectric is in direct contact with the shield electrode and is in direct contact with a sidewall of the trench; a gate dielectric having a first portion disposed directly on the inter-poly dielectric; and a gate electrode disposed above the shield electrode and insulated from the shield electrode by at least the gate dielectric, the gate dielectric having a second portion disposed directly in contact with the gate electrode and disposed directly in contact with a sidewall of the trench. - View Dependent Claims (11, 12)
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13. An apparatus, comprising:
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a shield dielectric disposed within a trench within an epitaxial layer of a semiconductor; a shield electrode disposed within the shield dielectric; an inter-poly dielectric having a first portion coupled to the shield dielectric and a second portion coupled to the shield electrode, the inter-poly dielectric having a top surface defining a curve curving in a same direction as at least a portion of a curve of a top surface of the shield electrode; a gate dielectric having a first portion disposed directly on the top surface of the inter-poly dielectric; and a gate electrode disposed above the shield electrode and insulated from the shield electrode by at least the gate dielectric, the gate dielectric having a second portion disposed directly in contact with the gate electrode and disposed directly in contact with a sidewall of the trench. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A method, comprising:
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forming a shield electrode within a shield dielectric disposed within a trench of an epitaxial layer of a semiconductor, the trench being aligned vertically along an axis; forming, within the trench, a first inter-poly dielectric having a portion intersecting a plane orthogonal to the axis, the plane intersecting the shield electrode; forming, within the trench, a second inter-poly dielectric having a portion intersecting the plane and disposed between the first inter-poly dielectric and the shield electrode; and forming a gate dielectric having a first portion disposed directly on the first inter-poly dielectric; and forming a gate electrode disposed above the shield electrode and insulated from the shield electrode by at least the gate dielectric, the gate dielectric having a second portion disposed directly in contact with the gate electrode and disposed directly in contact with a sidewall of the trench. - View Dependent Claims (21, 22)
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Specification