Structure and method for a transformer with magnetic features
First Claim
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1. A semiconductor device, comprising:
- a first inductor formed on a first substrate;
a second inductor formed on a second substrate and conductively coupled with the first inductor as a transformer;
a plurality of bump features configured between the first and second substrates, wherein the plurality of bump features include a magnetic material having a relative permeability substantially greater than one and are configured to enhance coupling between the first and second inductors; and
a plurality of vias configured between the first and second substrates and integrated with the plurality of bump features such that at least one via from plurality of vias interposes a first bump feature and a second bump feature from the plurality of bump features.
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Abstract
The present disclosure provides a semiconductor device. The semiconductor device includes a first inductor formed on a first substrate; a second inductor formed on a second substrate and conductively coupled with the first inductor as a transformer; and a plurality of micro-bump features configured between the first and second substrates. The plurality of micro-bump features include a magnetic material having a relative permeability substantially greater than one and are configured to enhance coupling between the first and second inductors.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a first inductor formed on a first substrate; a second inductor formed on a second substrate and conductively coupled with the first inductor as a transformer; a plurality of bump features configured between the first and second substrates, wherein the plurality of bump features include a magnetic material having a relative permeability substantially greater than one and are configured to enhance coupling between the first and second inductors; and a plurality of vias configured between the first and second substrates and integrated with the plurality of bump features such that at least one via from plurality of vias interposes a first bump feature and a second bump feature from the plurality of bump features. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device, comprising:
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a semiconductor substrate having an integrated circuit (IC) device; an interconnect structure disposed on the semiconductor substrate and coupled with the IC device; and a transformer disposed on the semiconductor substrate and integrated in the interconnect structure, wherein the transformer includes; a first inductor, a second inductor conductively coupled with the first inductor, and a magnetic feature that is disposed approximate the first and second inductors and is configured to enhance inductive coupling between the first and second inductors, wherein the magnetic feature includes a plurality of sub-features separated and distributed between the first and second inductors. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. An integrated circuit structure, comprising:
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a first substrate having a first inductor; a second substrate having a second inductor configured to couple with the first inductor as a transformer; a through substrate via (TSV) interposer bonded between the first and second substrates and having a plurality of via features embedded therein; and at least a subset of the via features being configured approximate the first and second inductors and including a magnetic material with a relative permeability substantially greater than one. - View Dependent Claims (19, 20)
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Specification