Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods

• US 8,610,279 B2
• Filed: 06/27/2011
• Issued: 12/17/2013
• Est. Priority Date: 08/28/2006
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Borthakur, Swarnal
• Primary Examiner(s): HOANG, QUOC DINH
• Application Number:
  US13/169,134
• Publication Number:
  US 20110256711A1
• Time in Patent Office: 904 Days
• Field of Search: 257/762, 257/774, 257/775, 257/E23.141, 257/E23.151, 257/E23.154
• US Class Current: 257/762
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76856 by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
• CPC Class Codes: H01L 21/76868 Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/02126 Collar structures
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05009 Bonding area integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05025 the internal layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

Microfeature workpieces having conductive vias formed by chemically reactive processes, and associated systems and methods are disclosed. A method in accordance with one embodiment includes disposing a conductive lining on walls of a via in a microfeature workpiece, so that a space is located between opposing portions of the lining facing toward each other from opposing portions of the wall. The method can further include chemically reacting the lining with a reactive material to form a chemical compound from a constituent of the reactive material and a constituent of the lining. The method can still further include at least partially filling the space with the compound. In particular embodiments, the conductive lining includes copper, the reactive material includes sulfur hexafluoride, and the chemical compound that at least partially fills the space in the via includes copper sulfide.

Claims

1. A microfeature workpiece, comprising:

a substrate having a first surface, a second surface, and a via, wherein the via has opposing wall portions extending entirely through the substrate;

a bond site carried by the substrate, wherein the opposing wall portions extend through the bond site; and

a copper compound substantially filling the via, wherein the bond site is electrically accessible from the second surface of the substrate via the copper compound.

2. The microfeature workpiece of claim 1, further comprising an image sensor at the first surface of the substrate.

3. The microfeature workpiece of claim 1, further comprising a conductive material positioned inwardly from the opposing wall portions of the via, wherein the conductive material defines a region between the opposing wall portions having a cross-sectional dimension and a length generally transverse to the cross-sectional dimension, and wherein the copper compound at least substantially fills the cross-sectional dimension of the region over at least a portion of the length.

4. The microfeature workpiece of claim 1 wherein the copper compound comprises copper sulfide (Cu_xS), and wherein x is between 1 and 2.

5. The microfeature workpiece of claim 1 wherein the copper compound is substantially free of voids.

6. The microfeature workpiece of claim 1 wherein the via does not include tin, lead, or solder.

7. The microfeature workpiece of claim 1 wherein:

the copper compound comprises copper sulfide; and

the microfeature workpiece further comprises a conductive material between the copper compound and the opposing wall portions of the via, the conductive material comprising copper.

8. The microfeature workpiece of claim 7 wherein the copper sulfide includes a gradient of copper atoms that decreases in a direction away from the first conductive material.

9. The interconnect structure of claim 1, further comprising:

a barrier material positioned inwardly from the opposing wall portions;

a seed material positioned inwardly from the barrier material; and

a conductive material between the seed material and the copper compound.

10. A microfeature workpiece, comprising:

a substrate having a thickness;

a bond site carried by the substrate; and

an interconnect structure extending through the thickness of the substrate and through the bond site, the interconnect structure having a sidewall, a first conductive material inward from the sidewall, and a second conductive material inward from the first conductive material, wherein the second conductive material at least partially fills a remaining portion of the interconnect structure, and wherein the second conductive material comprises a conductive compound that includes a constituent of the first conductive material.

11. The microfeature workpiece of claim 10 wherein the first conductive material comprises copper and the second conductive material comprises copper sulfide.

12. The microfeature workpiece of claim 10 wherein the second conductive material comprises copper sulfide, and wherein the copper sulfide includes a concentration of copper that varies across a cross-sectional dimension of the interconnect structure.

13. The microfeature workpiece of claim 10 wherein:

the substrate has a first surface and a second surface opposite the first surface, the thickness of the substrate being between the first and second surfaces; and

the second conductive material extends laterally along the first surface of the substrate.

14. The microfeature workpiece of claim 10 wherein each of the first and second conductive materials have melting points higher than that of solder.

15. The microfeature workpiece of claim 10 wherein:

the substrate has a first surface and a second surface opposite the first surface, the thickness of the substrate being between the first and second surfaces; and

the interconnect structure includes a first end portion proximate the first surface of the substrate, a second end portion proximate the second surface of the substrate, and a bond pad at the second end portion.

16. The microfeature workpiece of claim 15, further comprising a conductive coupler connected to at least one of the first end portion of the interconnect structure or the bond pad.

17. The microfeature workpiece of claim 10, further comprising an image sensor electrically coupled to the interconnect structure via the bond site.

18. The microfeature workpiece of claim 10 wherein:

the substrate has a first surface and a second surface opposite the first surface, the thickness of the substrate being between the first and second surfaces;

the bond site is at the first surface of the substrate;

the first conductive material comprises copper;

the second conductive material comprises copper sulfide;

the interconnect structure further comprises a barrier material and a seed material sequentially on one another adjacent to the sidewall such that the first conductive material is on the seed material, and a diffusion barrier between the first conductive material and the second conductive material; and

the microfeature workpiece further comprises an image sensor at the first surface of the substrate and electrically coupled to the interconnect structure.

19. A system, comprising:

a processor; and

a microfeature die including a substrate, a bond site carried by the substrate, and an interconnect structure extending through the substrate and the bond site, the bond site being electrically accessible from a back side of the substrate via the interconnect structure, wherein the interconnect structure includes a first conductive material inward from a sidewall of the interconnect structure and a second conductive material at least substantially filling a remainder of the interconnect structure, and wherein the first and second conductive materials do not include solder, the second conductive material comprising a conductive compound that includes a constituent of the first conductive compound.

20. The microfeature system of claim 19 wherein the first conductive material comprises copper, and wherein the second conductive material comprises copper sulfide.

21. The microfeature system of claim 19 wherein:

the bond site is at a front side of the substrate; and

the microfeature die further includes an image sensor at the front side of the substrate, the image sensor being electrically coupled to the interconnect structure via the bond site.