Bias field generation for a magneto sensor

• US 8,610,430 B2
• Filed: 09/17/2010
• Issued: 12/17/2013
• Est. Priority Date: 05/30/2008
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Werth, Tobias, Elian, Klaus, Sterling, James
• Primary Examiner(s): LEDYNH, BOT L
• Application Number:
  US12/885,349
• Publication Number:
  US 20110068779A1
• Time in Patent Office: 1,187 Days
• Field of Search: 324/207.21, 324/207.25, 324/252, 324/249, 324/251
• US Class Current: 324/252
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01D 5/12 using electric or magnetic means G01D5/06 takes precedence
• CPC Class Codes: G01D 5/16 by varying resistance
• CPC Class Codes: G01R 3/00 Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments , e.g. of probe tips
• CPC Class Codes: G01R 33/0023 Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration G01R33/0017 takes precedence
• CPC Class Codes: G01R 33/0052 Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips devices based on galvano-magnetic effect or the like H10N50/85
• CPC Class Codes: G01R 33/072 Constructional adaptation of the sensor to specific applications
• CPC Class Codes: G01R 33/09 Magnetoresistive devices
• CPC Class Codes: G01R 33/091 Constructional adaptation of the sensor to specific applications
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G01R 33/098 comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
• CPC Class Codes: G11B 2005/0008 Magnetic conditionning of heads, e.g. biasing
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: Y10T 29/49002 Electrical device making

Abstract

Embodiments related to the generation of magnetic bias fields for a magneto sensor are described and depicted.

Claims

1. A device comprising:

a bias field generator to provide a magnetic bias field for a magnetic sensor, wherein the bias field generator is configured to provide in a first direction a magnetic field component to bias the sensor, wherein the bias field generator comprises;

a body with a cavity, the body comprising magnetic or magnetizable material, the cavity extending in the first direction and lateral to the first direction such that the cavity is laterally bounded by material of the body at least in a second direction and a third direction, the second direction being orthogonal to the first direction and the third direction being orthogonal to the second direction and the first direction, wherein the body comprises at least four inclined surfaces formed by the cavity.

2. The device according to claim 1, wherein the cavity is surrounded by material of the magnetic or magnetisable body at least for a section along the first direction.

3. The device according to claim 1, wherein the cavity is a shallow indentation in the body.

4. The device according to claim 1, wherein the cavity is the only opening in the magnetic or magnetisable body provided for shaping the magnetic bias field.

5. The device according to claim 1,

wherein the body comprises a first part formed of magnetizable material and a second part formed of permanent magnetic material, wherein the first part is magnetized by the second part and wherein the cavity is formed in the first part.

6. The device according to claim 1, wherein the sensor is placed at a sensor location, wherein the lateral width of the cavity increases in the direction towards the sensor location.

7. The device according to claim 6, wherein the sensor is laterally surrounded in the first and second direction by the body.

8. The device according to claim 7, wherein the sensor is laterally completely surrounded by the body in the first and second direction.

9. The device according to claim 1, wherein the magnetic field generated by the body is shaped such that, at least within a local region, a magnetic field component in the second direction is substantially zero and a magnetic field component in the third direction is substantially zero.

10. The device according to claim 9, wherein the sensor is arranged such that a magnetic field component in the second and third direction is zero at a location of the sensor.

11. The device according to claim 9, wherein the sensor is located off-centered from the local region such that a magnetoresistive element of the sensor is biased with at least a non-zero magnetic field component in the third direction, the non-zero magnetic field component in the third direction causing a reduction of the sensitivity of the sensor compared to the maximum sensitivity.

12. The device according to claim 1, wherein the body comprises a protrusion formed of the permanent magnetic or magnetisable material, the protrusion being configured to shape the magnetic field and to maintain a position of the magnetoresistive device in at least one of the second and third direction.

13. The device according to claim 12, wherein the protrusion is further configured to maintain a position of the magnetoresistive device in the first direction.

14. The device according to claim 1, wherein the sensor comprises two magnetoresistive elements in a gradiometer arrangement.

15. The device according to claim 1, wherein the sensor comprises a Hall effect sensing element.

16. The device according to claim 1, wherein the at least four inclined surfaces are arranged to form a pyramid shape.

17. The device according to claim 1, wherein a width of the cavity in the second direction and a width of the cavity in the third direction increases in the first direction towards the sensing element.