Liquid crystal display device and electronic appliance
First Claim
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1. A liquid crystal display device comprising:
- a first substrate;
a semiconductor film comprising a channel formation region over the first substrate;
a gate electrode adjacent to the channel formation region with a gate insulating film interposed between the semiconductor film and the gate electrode;
a pixel electrode over the first substrate;
a conductive film over the pixel electrode;
a first insulating film over the pixel electrode;
a second insulating film over the first insulating film;
a common electrode over the second insulating film;
a liquid crystal over the common electrode; and
a second substrate over the liquid crystal,wherein the first insulating film and the second insulating film comprise silicon nitride,wherein the common electrode comprises indium and tin,wherein the channel formation region of the semiconductor film does not overlap the common electrode,wherein the pixel electrode and the common electrode overlap each other at least partially,wherein the pixel electrode does not include a slit,wherein the pixel electrode and the common electrode have transparent characteristic, andwherein the conductive film is electrically connected to the pixel electrode and the conductive film is electrically connected to the semiconductor film.
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Abstract
A pixel electrode or a common electrode is a light-transmissive conductive film; therefore, it is formed of ITO conventionally. Accordingly, the number of manufacturing steps and masks, and manufacturing cost have been increased. An object of the present invention is to provide a semiconductor device, a liquid crystal display device, and an electronic appliance each having a wide viewing angle, less numbers of manufacturing steps and masks, and low manufacturing cost compared with a conventional device. A semiconductor layer of a transistor, a pixel electrode, and a common electrode of a liquid crystal element are formed in the same step.
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Citations
30 Claims
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1. A liquid crystal display device comprising:
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a first substrate; a semiconductor film comprising a channel formation region over the first substrate; a gate electrode adjacent to the channel formation region with a gate insulating film interposed between the semiconductor film and the gate electrode; a pixel electrode over the first substrate; a conductive film over the pixel electrode; a first insulating film over the pixel electrode; a second insulating film over the first insulating film; a common electrode over the second insulating film; a liquid crystal over the common electrode; and a second substrate over the liquid crystal, wherein the first insulating film and the second insulating film comprise silicon nitride, wherein the common electrode comprises indium and tin, wherein the channel formation region of the semiconductor film does not overlap the common electrode, wherein the pixel electrode and the common electrode overlap each other at least partially, wherein the pixel electrode does not include a slit, wherein the pixel electrode and the common electrode have transparent characteristic, and wherein the conductive film is electrically connected to the pixel electrode and the conductive film is electrically connected to the semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A liquid crystal display device comprising:
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a first substrate; a semiconductor film comprising a channel formation region over the first substrate; a gate electrode adjacent to the channel formation region with a gate insulating film interposed between the semiconductor film and the gate electrode; a pixel electrode over the first substrate a conductive film over the semiconductor film; a first insulating film over the pixel electrode; a second insulating film over the first insulating film; a common electrode over the second insulating film; a liquid crystal over the common electrode; and a second substrate over the liquid crystal, wherein the first insulating film and the second insulating film comprise silicon nitride, wherein the common electrode comprises indium and tin, wherein the channel formation region of the semiconductor film does not overlap the common electrode, wherein the pixel electrode and the common electrode overlap each other at least partially, wherein the pixel electrode does not include a slit, wherein the pixel electrode and the common electrode have transparent characteristic, wherein the conductive film is electrically connected to the pixel electrode, and wherein the channel formation region of the semiconductor film does not overlap the pixel electrode. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A liquid crystal display device comprising:
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a first substrate; a semiconductor film comprising a channel formation region over the first substrate; a gate electrode adjacent to the channel formation region with a gate insulating film interposed between the semiconductor film and the gate electrode; a pixel electrode over the first substrate; a conductive film over the pixel electrode; a first insulating film over the pixel electrode; a second insulating film over the first insulating film; a common electrode over the second insulating film; a liquid crystal over the common electrode; and a second substrate over the liquid crystal, wherein the semiconductor film comprises a-InGaZnO, wherein the first insulating film and the second insulating film comprise silicon nitride, wherein the common electrode comprises indium and tin, wherein the channel formation region of the semiconductor film does not overlap the common electrode, wherein the pixel electrode and the common electrode overlap each other at least partially, wherein the pixel electrode does not include a slit, wherein the pixel electrode and the common electrode have transparent characteristic, and wherein the conductive film is electrically connected to the pixel electrode and the conductive film is electrically connected to the semiconductor film. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification