Electronic circuit control element with tap element
First Claim
1. A control element for use in a power supply, comprising:
- a high-voltage transistor, including;
a drain region of a first conductivity type;
a source region of the first conductivity type;
a tap region of the first conductivity type;
a body region of a second conductivity type, the body region adjoining the source region;
a drift region of the first conductivity type extending from the drain region to the body region;
a tap drift region of the first conductivity type extending from the drain region to the tap region, wherein the tap region adjoins the tap drift region at an end of the tap drift region opposite the drain region; and
an insulated gate disposed such that when the insulated gate is biased a channel is formed proximate to the insulated gate across the body region to form a conduction path between the source region and the drift region; and
a control circuit coupled to the insulated gate and to the tap region to control switching of the high-voltage transistor to regulate an output of the power supply, wherein a voltage at the tap region with respect to the source region is substantially constant and less than a voltage at the drain region with respect to the source region in response to the voltage at the drain region exceeding a pinch off voltage.
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Abstract
An example control element for use in a power supply includes a high-voltage transistor and a control circuit to control switching of the high-voltage transistor. The high-voltage transistor includes a drain region, source region, tap region, drift region, and tap drift region, all of a first conductivity type. The transistor also includes a body region of a second conductivity type. An insulated gate is included in the transistor such that when the insulated gate is biased a channel is formed across the body region to form a conduction path between the source region and the drift region. A voltage at the tap region with respect to the source region is substantially constant and less than a voltage at the drain region with respect to the source region in response to the voltage at the drain region exceeding a pinch off voltage.
39 Citations
21 Claims
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1. A control element for use in a power supply, comprising:
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a high-voltage transistor, including; a drain region of a first conductivity type; a source region of the first conductivity type; a tap region of the first conductivity type; a body region of a second conductivity type, the body region adjoining the source region; a drift region of the first conductivity type extending from the drain region to the body region; a tap drift region of the first conductivity type extending from the drain region to the tap region, wherein the tap region adjoins the tap drift region at an end of the tap drift region opposite the drain region; and an insulated gate disposed such that when the insulated gate is biased a channel is formed proximate to the insulated gate across the body region to form a conduction path between the source region and the drift region; and a control circuit coupled to the insulated gate and to the tap region to control switching of the high-voltage transistor to regulate an output of the power supply, wherein a voltage at the tap region with respect to the source region is substantially constant and less than a voltage at the drain region with respect to the source region in response to the voltage at the drain region exceeding a pinch off voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A power supply, comprising:
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an energy transfer element; a control element coupled to the energy transfer element to control a transfer of energy across the energy transfer element, wherein the control element includes; a high-voltage transistor coupled to the energy transfer element, the high-voltage transistor including a drain terminal, a source terminal, a control terminal and a tap terminal; and a control circuit coupled to the control terminal and the tap terminal of the high-voltage transistor to control switching of the high-voltage transistor, wherein a voltage at the tap terminal with respect to the source terminal of the high-voltage transistor is substantially constant and less than a voltage at the drain terminal with respect to the source region in response to the voltage at the drain region exceeding a pinch off voltage. - View Dependent Claims (11, 12, 13)
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14. A power supply, comprising:
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an energy transfer element; a high-voltage transistor coupled to the energy transfer element to control a transfer of energy across the energy transfer element, the high-voltage transistor including; a drain region of a first conductivity type; a source region of the first conductivity type; a tap region of the first conductivity type; a body region of a second conductivity type, the body region adjoining the source region; a drift region of the first conductivity type extending from the drain region to the body region; a tap drift region of the first conductivity type extending from the drain region to the tap region, wherein the tap region adjoins the tap drift region at an end of the tap drift region opposite the drain region; and an insulated gate disposed such that when the insulated gate is biased a channel is formed proximate to the insulated gate across the body region to form a conduction path between the source region and the drift region, wherein a voltage at the tap terminal with respect to the source terminal of the high-voltage transistor is to be substantially constant and less than a voltage at the drain terminal with respect to the source region in response to the voltage at the drain region exceeding a pinch off voltage. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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Specification