Plasma treatment system

• US 8,613,827 B2
• Filed: 07/08/2005
• Issued: 12/24/2013
• Est. Priority Date: 04/19/2002
• Status: Expired due to Fees

• Current Assignee: Nordson Corporation
• Original Assignee: Nordson Corporation
• Inventors: Tyler, James Scott, Getty, James D., Bolden, Thomas V. II, Condrashoff, Robert Sergei
• Primary Examiner(s): Zervigon, Rudy
• Application Number:
  US11/177,575
• Publication Number:
  US 20050269031A1
• Time in Patent Office: 3,091 Days
• Field of Search: 118/723.E, 118/715, 118/723.R, 15634543-34545
• US Class Current: 156/345.45
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32422 Arrangement for selecting ions or species in the plasma

Abstract

A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.

Claims

1. An apparatus for processing a workpiece with free radicals from a light-emitting plasma including ions and the free radicals, comprising:

a vacuum chamber including a processing space and a plasma cavity in communication with said processing space;

a holder for the workpiece positioned in said processing space of said vacuum chamber;

a vacuum port in said vacuum chamber adapted to evacuate said processing space and said plasma cavity;

a process gas supply port in said vacuum chamber adapted to introduce a process gas to said plasma cavity;

a powered electrode located within said plasma cavity;

a center slotted plate positioned between said plasma cavity and said processing space, said center slotted plate having a plurality of first slots; and

an upper slotted plate positioned between said center slotted plate and said powered electrode and said upper slotted plate having a plurality of second slots;

a lower slotted plate including a plurality of third slots, said lower slotted plate being arranged between said center slotted plate and said processing space; and

a plurality of electrically-conductive spacers between said center slotted plate, said lower slotted plate, and said upper slotted plate, said plurality of electrically-conductive spacers providing an electrical contact between said center slotted plate, said lower slotted plate, and said upper slotted plate,

wherein said lower, center, and upper slotted plates are electrically grounded to said vacuum chamber, said powered electrode is capable of exciting the process gas in said plasma cavity to generate the ions and the free radicals of the plasma in the plasma cavity between the upper slotted plate and the powered electrode, said first slots, said second slots, and said third slots are configured to transfer the free radicals in the plasma from said plasma cavity to said processing space and to substantially reduce the transfer of the ions in the plasma from said plasma cavity to said processing space, and said first slots are offset from said second slots such that said first slots are not aligned with said second slots in a direction extending from said plasma cavity toward said processing space and said first slots are offset from said third slots said first slots are not aligned with said third slots in the direction extending from said plasma cavity toward said processing space to substantially eliminate line-of-sight paths from said plasma cavity to said processing space for reducing light transfer from the plasma to the workpiece.

2. The apparatus of claim 1 wherein said vacuum chamber includes a chamber lid configured for movement between open and closed positions for permitting introduction and removal of the workpiece to and from said holder, said chamber lid carries said lower slotted plate, said center slotted plate, said upper slotted plate, and said powered electrode as said chamber lid moves between the opened and closed positions, and said plasma cavity is located inside said chamber lid.

3. The apparatus of claim 2 wherein said chamber lid further includes said process gas supply port coupled in fluid communication with said plasma cavity.

4. The apparatus of claim 3 wherein said chamber lid further includes a plurality of passageways for distributing the process gas received from said process gas supply port to said plasma cavity, and said plasma excitation source includes an electrode insulator positioned between said powered electrode and said chamber lid, said electrode insulator includes an outer periphery, said first powered electrode includes an outer periphery, and further comprising:

a plurality of outlets proximate to said electrode insulator emitting the process gas that seeps around said outer periphery of said electrode insulator and said outer periphery of said first powered electrode for substantially uniform distribution into said plasma cavity.

5. The apparatus of claim 1 wherein said plurality of electrically-conductive spacers are configured to separate said center slotted plate from said upper slotted plate by a first distance, and to separate said center slotted plate from said lower slotted plate by a second distance, and said first distance differs from said second distance.

6. The apparatus of claim 5 wherein said second distance is greater than said first distance.

7. The apparatus of claim 6 wherein said upper, center, and lower plates have an approximately equal thickness, said first distance is approximately equal to said equal thickness, and said second distance is approximately equal to 1.5 times said equal thickness.

8. The apparatus of claim 1 wherein said powered electrode has a first planar surface, a second planar surface, and a side edge connecting said first and second planar surfaces, said first and second planar surfaces and said side edge each positioned substantially equidistant from said electrically grounded surfaces.

9. An apparatus for processing a workpiece with free radicals from a light-emitting plasma including ions and the free radicals, comprising:

a vacuum chamber including a processing space, a plasma cavity in communication with said processing space, and a plurality of electrically grounded surfaces positioned within said plasma cavity;

a holder for the workpiece positioned in said processing space of said vacuum chamber;

a vacuum port in said vacuum chamber adapted to evacuate said processing space and said plasma cavity;

a process gas supply port in said vacuum chamber adapted to introduce a process gas to said plasma cavity;

a powered electrode located within said plasma cavity and positioned substantially equidistant from said electrically grounded surfaces;

a center slotted plate positioned between said plasma cavity and said processing space, said center slotted plate having a plurality of first slots; and

an upper slotted plate positioned between said center slotted plate and said powered electrode and said upper slotted plate having a plurality of second slots; and

a lower slotted plate including a plurality of third slots, said lower slotted plate being arranged between said center slotted plate and said processing space,

wherein said lower, center, and upper slotted plates are electrically grounded to said vacuum chamber, said powered electrode is capable of exciting the process gas in said plasma cavity to generate the ions and the free radicals of the plasma in the plasma cavity between the upper slotted plate and the powered electrode, said first slots, said second slots, and said third slots are configured to transfer the free radicals in the plasma from said plasma cavity to said processing space and to substantially reduce the transfer of the ions in the plasma from said plasma cavity to said processing space, and said first slots are offset from said second slots such that said first slots are not aligned with said second slots in a direction extending from said plasma cavity toward said processing space and said first slots are offset from said third slots said first slots are not aligned with said third slots in the direction extending from said plasma cavity toward said processing space to substantially eliminate line-of-sight paths from said plasma cavity to said processing space for reducing light transfer from the plasma to the workpiece.

10. The apparatus of claim 9 wherein said powered electrode has a first planar surface, a second planar surface, and a side edge connecting said first and second planar surfaces, said first and second planar surfaces and said side edge each positioned substantially equidistant from said electrically grounded surfaces.

11. The apparatus of claim 9 wherein said vacuum chamber includes a chamber lid configured for movement between open and closed positions for permitting introduction and removal of the workpiece to and from said holder, said chamber lid carries said lower slotted plate, said center slotted plate, said upper slotted plate, and said powered electrode as said chamber lid moves between the opened and closed positions, and said plasma cavity is located inside said chamber lid.

12. The apparatus of claim 11 wherein said chamber lid further includes said process gas supply port coupled in fluid communication with said plasma cavity.

13. The apparatus of claim 12 wherein said chamber lid further includes a plurality of passageways for distributing the process gas received from said process gas supply port to said plasma cavity, and said plasma excitation source includes an electrode insulator positioned between said powered electrode and said chamber lid, said electrode insulator includes an outer periphery, said first powered electrode includes an outer periphery, and further comprising:

a plurality of outlets proximate to said electrode insulator emitting the process gas that seeps around said outer periphery of said electrode insulator and said outer periphery of said first powered electrode for substantially uniform distribution into said plasma cavity.

14. The apparatus of claim 9 further comprising:

a plurality of electrically-conductive spacers between said center slotted plate, said lower slotted plate, and said upper slotted plate, said plurality of electrically-conductive spacers providing an electrical contact between said center slotted plate, said lower slotted plate, and said upper slotted plate.

15. The apparatus of claim 14 wherein said plurality of electrically-conductive spacers are configured to separate said center slotted plate from said upper slotted plate by a first distance, and to separate said center slotted plate from said lower slotted plate by a second distance, and said first distance differs from said second distance.

16. The apparatus of claim 15 wherein said second distance is greater than said first distance.

17. The apparatus of claim 16 wherein said upper, center, and lower plates have an approximately equal thickness, said first distance is approximately equal to said equal thickness, and said second distance is approximately equal to 1.5 times said equal thickness.