Method of etching a high aspect ratio contact
First Claim
Patent Images
1. A method of etching an opening in a dielectric layer, comprising:
- forming a plasma etching gas from C4F6, C4F8 or a mixture of C4F6 and C4F8, an oxygen source gas, an inert gas, and C2F4; and
etching the opening through the dielectric layer to an underlying substrate with the plasma etching gas while depositing polymer material to form and maintain a conformal polymer layer at a thickness effective to continually passivate sidewalls of the opening during the etching;
wherein after the etching, the conformal polymer layer remains over the sidewalls.
8 Assignments
0 Petitions
Accused Products
Abstract
Methods and an etch gas composition for etching a contact opening in a dielectric layer are provided. Embodiments of the method use a plasma generated from an etch gas composed of C4F8 and/or C4F6, an oxygen source, and a carrier gas in combination with tetrafluoroethane (C2F4) or a halofluorocarbon analogue of C2F4.
52 Citations
28 Claims
-
1. A method of etching an opening in a dielectric layer, comprising:
-
forming a plasma etching gas from C4F6, C4F8 or a mixture of C4F6 and C4F8, an oxygen source gas, an inert gas, and C2F4; and etching the opening through the dielectric layer to an underlying substrate with the plasma etching gas while depositing polymer material to form and maintain a conformal polymer layer at a thickness effective to continually passivate sidewalls of the opening during the etching; wherein after the etching, the conformal polymer layer remains over the sidewalls. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 25, 26, 27, 28)
-
-
11. A method of etching an opening in a dielectric layer, comprising:
-
forming plasma etching gas from C4F6, C4F8 or a mixture thereof at a flow rate of about 50-70 sccm, an oxygen source gas at a flow rate of about 20-40 sccm, an inert diluent gas at a flow rate of about 900-1300 sccm, and C2F4 at a flow rate of about 80-100 sccm; and etching the opening through the dielectric layer to an underlying substrate with the plasma etching gas while depositing polymer material during the etching to form and maintain a conformal polymer layer at a thickness effective to continually passivate sidewalls of the opening during the etching; wherein after the etching, the conformal polymer layer remains over the sidewalls.
-
-
12. A method of etching an opening in a dielectric layer comprising:
-
applying a plasma etching gas to etch the dielectric layer to an underlying substrate, the plasma etching gas formed from C4F6, C4F8 or mixture thereof, an oxygen source gas, an inert diluent gas, and a halofluorocarbon selected from the group consisting of C2F4Br2, C2F4I2 and CF2I2; wherein a polymer material is deposited during the etching to form and maintain a conformal polymer layer at a thickness effective to continually passivate sidewalls of the opening during etching, and after the etching, the conformal polymer layer remains over the sidewalls. - View Dependent Claims (13, 14, 15, 16, 17, 18)
-
-
19. A method of etching an opening in a dielectric layer, comprising:
applying a plasma etching gas comprising at least one of C4F6 and C4F8, an oxygen source gas, an inert diluent gas, and C2F4, in amounts effective to form a plasma etching gas to etch the opening through the dielectric layer while depositing a polymer material to form and maintain a conformal polymer layer on sidewalls of the opening at a thickness effective to continually passivate the sidewalls during the etching, wherein after the etching, the conformal polymer layer remains over the sidewalls. - View Dependent Claims (20, 21, 22)
-
23. A method of etching an opening in a dielectric layer, comprising:
applying a plasma etching gas consisting essentially of at least one of C4F6 and C4F8, an oxygen source gas, an inert diluent gas, and a halofluorocarbon selected from the group consisting of C2F4Br2, C2F4I2 and CF2I2, in amounts effective to etch the opening through the dielectric layer while depositing a polymer material to form and maintain a conformal polymer layer on sidewalls of the opening at a thickness effective to continually passivate the sidewalls during the etching, wherein after the etching, the conformal polymer layer remains over the sidewalls.
-
24. A method of etching an opening in a dielectric layer, comprising:
-
applying a plasma etching gas consisting essentially of at least one of C4F6 and C4F8, an oxygen source gas, an inert diluent gas, a halofluorocarbon selected from the group consisting of C2F4Br2, C2F4I2 and CF2I2, and at least one of an additional fluorocarbon gas having the general formula Cx Fy where x=1-6 and y=2-8 and a hydrofluorocarbon gas having the general formula CxHyFz where x=1-6, y=1-6 and z=1-6, said gases in amounts effective to etch the opening through the dielectric layer while depositing a polymer material to form and maintain a conformal polymer layer on sidewalls of the opening at a thickness effective to continually passivate the sidewalls during the etching, wherein the conformal polymer layer remains over the sidewalls after the etching.
-
Specification