Display apparatus and method of manufacturing the same
First Claim
1. A display apparatus comprising:
- a substrate; and
a plurality of pixels disposed on the substrate, each pixel comprising;
a gate electrode disposed on the substrate;
a gate dielectric layer disposed on the substrate and the gate electrode;
an oxide semiconductor pattern that overlaps the gate electrode disposed on the gate dielectric layer;
a first insulating pattern disposed directly, on the oxide semiconductor pattern that overlaps the gate electrode;
a second insulating pattern disposed directly on the oxide semiconductor pattern and spaced apart from the first insulating pattern;
a drain electrode disposed on the oxide semiconductor pattern;
a source electrode disposed on the oxide semiconductor pattern and spaced apart from the drain electrode; and
a pixel electrode pattern disposed on the second insulating pattern that contacts the drain electrode, whereinthe drain electrode covers a portion of the pixel electrode pattern and the oxide semiconductor pattern between the first and second insulating patterns, the second insulating pattern is spaced apart from the gate electrode, and a sidewall of the second insulating pattern is aligned and coplanar with a sidewall of the pixel electrode pattern.
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Accused Products
Abstract
A display apparatus includes a substrate and a plurality of pixels disposed on the substrate. Each pixel includes a gate electrode disposed on the substrate, a gate dielectric layer disposed on the substrate and the gate electrode, an oxide semiconductor pattern disposed on the gate dielectric layer, a first insulating pattern disposed on the oxide semiconductor pattern that overlaps the gate electrode, a second insulating pattern disposed on the oxide semiconductor pattern and spaced apart from the first insulating pattern, source and drain electrodes spaced apart from each other on the oxide semiconductor pattern, a pixel electrode pattern disposed on the second insulating pattern to make contact with the source electrode, and a channel area defined where the oxide semiconductor pattern overlaps the gate electrode. A high carrier mobility channel is formed in the channel area when a turn-on voltage is applied to the gate electrode.
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Citations
10 Claims
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1. A display apparatus comprising:
- a substrate; and
a plurality of pixels disposed on the substrate, each pixel comprising;
a gate electrode disposed on the substrate;
a gate dielectric layer disposed on the substrate and the gate electrode;an oxide semiconductor pattern that overlaps the gate electrode disposed on the gate dielectric layer; a first insulating pattern disposed directly, on the oxide semiconductor pattern that overlaps the gate electrode; a second insulating pattern disposed directly on the oxide semiconductor pattern and spaced apart from the first insulating pattern; a drain electrode disposed on the oxide semiconductor pattern; a source electrode disposed on the oxide semiconductor pattern and spaced apart from the drain electrode; and a pixel electrode pattern disposed on the second insulating pattern that contacts the drain electrode, wherein the drain electrode covers a portion of the pixel electrode pattern and the oxide semiconductor pattern between the first and second insulating patterns, the second insulating pattern is spaced apart from the gate electrode, and a sidewall of the second insulating pattern is aligned and coplanar with a sidewall of the pixel electrode pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
- a substrate; and
Specification
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- Resources
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Current AssigneeSamsung Display Company Limited (Samsung Electronics Co. Ltd.)
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Original AssigneeSamsung Display Company Limited (Samsung Electronics Co. Ltd.)
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InventorsKim, Swae-Hyun, Yoon, YeoGeon, Park, Jae Hwa, Tae, Changil
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Primary Examiner(s)Wagner, Jenny L
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Assistant Examiner(s)BOYLE, ABBIGALE A
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Application NumberUS13/236,329Publication NumberTime in Patent Office827 DaysField of Search257/43, 257/401, 257/59, 257/72, 438/104, 345/92, 349139-148US Class Current257/43CPC Class CodesH01L 27/1225 with semiconductor material...
