Semiconductor light emitting device
First Claim
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1. A semiconductor light emitting device comprising:
- a light emitting structure including a first conductive semiconductor layer, an active layer on a top surface of the first conductive semiconductor layer and a second conductive semiconductor layer on a top surface of the active layer;
an electrode disposed on a bottom surface of the light emitting structure;
a recess recessed from a top surface of the light emitting structure;
an electrode layer on the top surface of the light emitting structure;
a transmittive layer disposed between the light emitting structure and the electrode layer; and
a conductive support member disposed on a top surface of the electrode layer,wherein the recess is recessed in a direction toward the bottom surface of the light emitting structure,wherein the transmittive layer includes a first portion disposed between the top surface of the light emitting structure and the electrode layer and a second portion extended outward beyond an outer wall of the light emitting structure, andwherein a protrusion of the first portion of the transmittive layer is disposed in the recess.
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Abstract
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. An electrode is on a bottom surface of the light emitting structure and an electrode layer and a conductive support member are disposed on the top surface of the light emitting structure. A recess is recessed from a top surface of the light emitting structure. A transmittive layer is between the light emitting structure and the electrode layer. The transmittive layer includes a first portion having a protrusion disposed in the recess.
16 Citations
20 Claims
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1. A semiconductor light emitting device comprising:
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a light emitting structure including a first conductive semiconductor layer, an active layer on a top surface of the first conductive semiconductor layer and a second conductive semiconductor layer on a top surface of the active layer; an electrode disposed on a bottom surface of the light emitting structure; a recess recessed from a top surface of the light emitting structure; an electrode layer on the top surface of the light emitting structure; a transmittive layer disposed between the light emitting structure and the electrode layer; and a conductive support member disposed on a top surface of the electrode layer, wherein the recess is recessed in a direction toward the bottom surface of the light emitting structure, wherein the transmittive layer includes a first portion disposed between the top surface of the light emitting structure and the electrode layer and a second portion extended outward beyond an outer wall of the light emitting structure, and wherein a protrusion of the first portion of the transmittive layer is disposed in the recess. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification