Light emitting device and manufacturing method thereof

• US 8,614,547 B2
• Filed: 06/29/2011
• Issued: 12/24/2013
• Est. Priority Date: 01/29/2001
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime
• Primary Examiner(s): HINES, ANNE M
• Application Number:
  US13/171,547
• Publication Number:
  US 20110266946A1
• Time in Patent Office: 909 Days
• Field of Search: 313498-512
• US Class Current: 313/506
• CPC Class Codes: H10K 50/82 Cathodes
• CPC Class Codes: H10K 50/86 Arrangements for improving contrast, e.g. preventing reflection of ambient light
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/8052 Cathodes
• CPC Class Codes: H10K 59/8791 Arrangements for improving contrast, e.g. preventing reflection of ambient light

Abstract

There is provided a method for manufacturing a light emitting device in which no copy-in is caused in the case of a light emitting device having a glossy cathode. An uneven portion is formed on the surface of a cathode which is in contact with an organic layer in a pixel portion, and incident light is reflected in all directions. An insulating film having a high light absorption property is formed in a driver circuit portion, and the copy-in becomes invisible to the observer.

Claims

1. A light emitting device comprising:

a transistor comprising a channel forming region, a gate insulating film, and a gate electrode over a substrate;

an insulating film having a contact hole over the transistor;

a layer having an uneven surface over the insulating film, wherein the uneven surface is provided opposite to a side of the layer closest to the substrate, wherein the uneven surface does not overlap with the contact hole, and wherein the uneven surface is intentionally formed;

a conductive film over the uneven surface, wherein the conductive film is electrically connected to the transistor through the contact hole;

an organic layer over the conductive film; and

an electrode over the organic layer.

2. The light emitting device according to claim 1, wherein the conductive film has a property of transmitting light.

3. The light emitting device according to claim 1, wherein the layer contains a transparent material.

4. The light emitting device according to claim 1, wherein the transistor is a thin film transistor.

5. A light emitting device comprising:

a transistor comprising a channel forming region, a gate insulating film, and a gate electrode over a substrate;

a first insulating film over the transistor;

a layer having an uneven surface on the first insulating film, wherein the uneven surface is provided opposite to a side of the layer closest to the substrate;

a second insulating film on the first insulating film, wherein a contact hole is provided in the first insulating film and the second insulating film, and wherein the uneven surface does not overlap with the contact hole;

a conductive film over the uneven surface, wherein the conductive film is electrically connected to the transistor through the contact hole;

an organic layer over the conductive film; and

an electrode over the organic layer.

6. The light emitting device according to claim 5, wherein the conductive film has a property of transmitting light.

7. The light emitting device according to claim 5, wherein the layer contains a transparent material.

8. The light emitting device according to claim 5, wherein the transistor is a thin film transistor.

9. A light emitting device comprising:

a transistor comprising a channel forming region, a gate insulating film, and a gate electrode over a substrate;

an insulating film having a contact hole over the transistor;

a layer comprising a resin, and having an uneven surface over the insulating film, wherein the uneven surface is provided opposite to a side of the layer closest to the substrate, and wherein the uneven surface does not overlap with the contact hole;

a first electrode over the uneven surface, wherein the first electrode is electrically connected to the transistor through the contact hole;

an organic layer over the first electrode and in contact with a portion of the first electrode; and

a second electrode over the organic layer.

10. A The light emitting device according to claim 9, wherein the first electrode has a property of transmitting light.

11. The light emitting device according to claim 9, wherein the layer contains a transparent material comprising an acrylic material.

12. The light emitting device according to claim 9, wherein the transistor is a thin film transistor.

13. A light emitting device comprising:

a transistor comprising a channel forming region, a gate insulating film, and a gate electrode over a first substrate;

an insulating film having a contact hole over the transistor;

a layer having an uneven surface over the insulating film, wherein the uneven surface is provided opposite to a side of the layer closest to the first substrate, and wherein the uneven surface is intentionally formed;

a first electrode over the uneven surface, wherein the first electrode is electrically connected to the transistor through the contact hole;

an organic layer over the first electrode and in contact with a portion of the first electrode;

a second electrode over the organic layer; and

a second substrate over the second electrode bonded to the first substrate.

14. The light emitting device according to claim 13, wherein the first electrode has a property of transmitting light.

15. The light emitting device according to claim 13, wherein the layer contains a transparent material.

16. The light emitting device according to claim 13, wherein the transistor is a thin film transistor.