Semiconductor device and method for driving the same
First Claim
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1. A semiconductor device comprising:
- a diode;
a first transistor;
a second transistor;
a first capacitor; and
a functional circuit,wherein an output terminal of the diode is electrically connected to a first signal line,wherein one of a source and a drain of the first transistor is electrically connected to the first signal line,wherein the other of the source and the drain of the first transistor is electrically connected to a reference potential line,wherein a gate of the second transistor is electrically connected to the first signal line,wherein one of a source and a drain of the second transistor is electrically connected to a second signal line,wherein the functional circuit is electrically connected to the other of the source and the drain of the second transistor,wherein one of electrodes of the first capacitor is electrically connected to the first signal line, andwherein the other of the electrodes of the first capacitor is electrically connected to the second signal line.
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Abstract
An object is to provide a semiconductor device in which lower power consumption is realized by lowering voltage for data writing without increase in types of power supply potentials. Another object is to provide a semiconductor device in which threshold voltage drop of a selection transistor is suppressed without increase in types of power supply potentials for data writing. A diode-connected transistor is electrically connected in series with a word line electrically connected to a gate of an n-channel selection transistor. A capacitor is provided between the word line and a bit line electrically connected to one of a source and a drain of the selection transistor; alternatively, the capacitance between the bit line and the word line is used. In data writing, the timing of selecting the word line is earlier than the timing of selecting the bit line.
126 Citations
20 Claims
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1. A semiconductor device comprising:
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a diode; a first transistor; a second transistor; a first capacitor; and a functional circuit, wherein an output terminal of the diode is electrically connected to a first signal line, wherein one of a source and a drain of the first transistor is electrically connected to the first signal line, wherein the other of the source and the drain of the first transistor is electrically connected to a reference potential line, wherein a gate of the second transistor is electrically connected to the first signal line, wherein one of a source and a drain of the second transistor is electrically connected to a second signal line, wherein the functional circuit is electrically connected to the other of the source and the drain of the second transistor, wherein one of electrodes of the first capacitor is electrically connected to the first signal line, and wherein the other of the electrodes of the first capacitor is electrically connected to the second signal line. - View Dependent Claims (2, 3, 4, 5, 16, 17, 18)
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6. A semiconductor device comprising:
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a diode; a first transistor; a first capacitor; and a memory portion comprising; a second transistor; and a functional circuit, wherein an output terminal of the diode is electrically connected to a first signal line, wherein one of a source and a drain of the first transistor is electrically connected to the first signal line, wherein the other of the source and the drain of the first transistor is electrically connected to a reference potential line, wherein a gate of the second transistor is electrically connected to the first signal line, wherein one of a source and a drain of the second transistor is electrically connected to a second signal line, wherein the functional circuit is electrically connected to the other of the source and the drain of the second transistor, wherein one of electrodes of the first capacitor is electrically connected to the first signal line, and wherein the other of the electrodes of the first capacitor is electrically connected to the second signal line. - View Dependent Claims (7, 8, 9, 10, 19, 20)
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11. A semiconductor device comprising:
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a diode; a first transistor; and a pixel comprising; a first capacitor; a second transistor; and a functional circuit, wherein an output terminal of the diode is electrically connected to a first signal line, wherein one of a source and a drain of the first transistor is electrically connected to the first signal line, wherein the other of the source and the drain of the first transistor is electrically connected to a reference potential line, wherein a gate of the second transistor is electrically connected to the first signal line, wherein one of a source and a drain of the second transistor is electrically connected to a second signal line, wherein the functional circuit is electrically connected to the other of the source and the drain of the second transistor, wherein one of electrodes of the first capacitor is electrically connected to the first signal line, and wherein the other of the electrodes of the first capacitor is electrically connected to the second signal line. - View Dependent Claims (12, 13, 14, 15)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsShionoiri, Yutaka
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Primary Examiner(s)Hur, J. H.
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Application NumberUS13/186,879Publication NumberTime in Patent Office888 DaysField of Search365/175, 365/230.06, 365/243, 365/63, 365/72, 365/149, 365/187, 365/188US Class Current365/72CPC Class CodesG11C 11/405 with three charge-transfer ...G11C 11/4085 Word line control circuits,...H01L 27/1225 with semiconductor material...
