Methods and apparatus for atomic layer etching
First Claim
1. A method for etching a layer on a substrate in a semiconductor processing chamber, said chamber having a plasma generating region and a substrate processing region, said plasma generating region being separated from said substrate processing region by a separating plate structure, comprising:
- introducing a first gas into said substrate processing region of said chamber, said first gas being an etchant gas suitable for etching said layer;
introducing an inert gas into said plasma generating region such that a pressure of said inert gas in said plasma generating region is greater than a pressure of said etchant gas in said substrate processing region;
allowing said first gas to be present in said substrate processing region of said chamber for a period of time sufficient to cause adsorption of at least some of said first gas into said layer;
replacing at least 80% of said first gas in said chamber with said inert gas after said period of time expires;
generating metastables from said inert gas; and
etching said layer with said metastables.
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Accused Products
Abstract
Substrate processing systems and methods for etching an atomic layer are disclosed. The methods and systems are configured to introducing a first gas into the chamber, the gas being an etchant gas suitable for etching the layer and allowing the first gas to be present in the chamber for a period of time sufficient to cause adsorption of at least some of the first gas into the layer. The first gas is substantially replaced in the chamber with an inert gas, and metastables are then generated from the inert gas to etch the layer with the metastables while substantially preventing the plasma charged species from etching the layer.
433 Citations
19 Claims
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1. A method for etching a layer on a substrate in a semiconductor processing chamber, said chamber having a plasma generating region and a substrate processing region, said plasma generating region being separated from said substrate processing region by a separating plate structure, comprising:
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introducing a first gas into said substrate processing region of said chamber, said first gas being an etchant gas suitable for etching said layer; introducing an inert gas into said plasma generating region such that a pressure of said inert gas in said plasma generating region is greater than a pressure of said etchant gas in said substrate processing region; allowing said first gas to be present in said substrate processing region of said chamber for a period of time sufficient to cause adsorption of at least some of said first gas into said layer; replacing at least 80% of said first gas in said chamber with said inert gas after said period of time expires; generating metastables from said inert gas; and etching said layer with said metastables. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 10)
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9. The method of claim wherein said period of time is between about 0.05 second to about 180 seconds.
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11. A method for etching a layer on a substrate in a semiconductor processing chamber, said chamber having a plasma generating region and a substrate processing region, said plasma generating region being separated from said substrate processing region by a separating plate structure, comprising:
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introducing a first gas into said substrate processing region of said chamber, said first gas being an etchant gas suitable for etching said layer; introducing an inert gas into said plasma generating region; allowing said first gas to be present in said substrate processing region of said chamber for a period of time sufficient to cause adsorption of at least some of said first gas into said layer while maintaining a pressure of said inert gas in said plasma generating region is greater than a pressure of said etchant gas in said substrate processing region; replacing at least 80% of said first gas in said substrate processing region of said chamber with said inert gas after said period of time expires; generating plasma in said plasma generating region of said chamber to generate metastables from said inert gas; and etching said layer with said metastables while maintaining a pressure in said substrate processing region below 10 mTorr. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification