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Semiconductor device and method for manufacturing the same

  • US 8,618,537 B2
  • Filed: 05/27/2011
  • Issued: 12/31/2013
  • Est. Priority Date: 06/22/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • in a first region over a semiconductor substrate;

    a first insulating layer located over the semiconductor substrate;

    a first wiring embedded into the surface of the first insulating layer;

    a second insulating layer located over the first insulating layer;

    a third insulating layer located over the second insulating layer; and

    a via and a second wiring embedded into the second insulating layer and the third insulating layer through a barrier metal and coupled to the first wiring, andin a second region over the semiconductor substrate;

    the first insulating layer located over the semiconductor substrate;

    a gate electrode embedded into the surface of the first insulating layer;

    the second insulating layer located over the first insulating layer;

    a semiconductor layer located over the second insulating layer;

    the third insulating layer located over the semiconductor layer; and

    a first electric conductor and a second electric conductor embedded into the third insulating layer so as to sandwich the gate electrode in a position overlapped with the semiconductor layer in a plan view through a barrier metal and coupled to the semiconductor layer through the barrier metal.

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