Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
First Claim
1. A thin film transistor (TFT) comprising:
- a gate, a channel layer, a source, and a drain, whereinthe channel layer is formed of an oxide semiconductor,an exposed portion of the channel layer between the source and drain is amorphous, andonly a portion of the channel layer contacting the source and the drain is a crystallized portion, the portion of the channel layer includes,only a first portion of the channel layer formed entirely under the source and only a second portion of the channel layer formed entirely under the drain.
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Accused Products
Abstract
Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.
84 Citations
19 Claims
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1. A thin film transistor (TFT) comprising:
a gate, a channel layer, a source, and a drain, wherein the channel layer is formed of an oxide semiconductor, an exposed portion of the channel layer between the source and drain is amorphous, and only a portion of the channel layer contacting the source and the drain is a crystallized portion, the portion of the channel layer includes, only a first portion of the channel layer formed entirely under the source and only a second portion of the channel layer formed entirely under the drain. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a thin film transistor (TFT) including a gate, a channel layer, a source, and a drain, wherein the channel layer is formed of an oxide semiconductor, an exposed portion of the channel layer between the source and drain is amorphous, and only a portion of the channel layer contacting the source and the drain is a crystallized portion, and wherein the portion of the channel layer includes only a first portion of the channel layer formed entirely under the source and only a second portion of the channel layer formed entirely under the drain, wherein the method comprises:
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forming the channel layer using the oxide semiconductor; and crystallizing the portion of the channel layer contacting the source and the drain by injecting a metal component into the channel layer. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification