Semiconductor light emitting device having a reflective layer

• US 8,618,571 B2
• Filed: 07/27/2012
• Issued: 12/31/2013
• Est. Priority Date: 11/26/2007
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Park, Hyung Jo
• Primary Examiner(s): Jahan, Bilkis
• Application Number:
  US13/560,812
• Publication Number:
  US 20120286316A1
• Time in Patent Office: 522 Days
• Field of Search: 257/98, 257/96
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active; an electrode on a first region of the first conductive semiconductor layer; a conductive support member under the light emitting structure; a metal layer between the light emitting structure and the conductive support member; and a reflective layer between the metal layer and the light emitting structure, wherein the metal layer is physically contacted with a lower surface of the reflective layer, wherein the reflective layer includes a first layer and a second layer, wherein the first layer has a different material from the second layer, wherein the metal layer has a protrusion, wherein the first conductive semiconductor layer includes a roughness.

Claims

1. A semiconductor light emitting device having a reflective layer comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;

an electrode on a first region of the first conductive semiconductor layer;

a conductive support member under the light emitting structure;

a metal layer between the light emitting structure and the conductive support member;

wherein a bottom part of the metal layer is formed in the conductive support member and

the reflective layer between the metal layer and the light emitting structure,

wherein the metal layer is physically contacted with a lower surface of the reflective layer,

wherein the reflective layer includes a first layer and a second layer,

wherein the first layer has a different material from the second layer,

wherein the metal layer has a protrusion on the conductive support member,

wherein the first conductive semiconductor layer includes a roughness formed on an upper surface of the first conductive semiconductor layer, and

wherein the first region is formed with a flat surface.

2. The semiconductor light emitting device as claimed in claim 1, wherein the first layer and the second layer have different refractive indexes from each other.

3. The semiconductor light emitting device as claimed in claim 1, wherein the reflective layer has a flat lower surface.

4. The semiconductor light emitting device as claimed in claim 1, wherein the reflective layer has a recess and the protrusion of the metal layer is disposed into the recess of the reflective layer.

5. The semiconductor light emitting device as claimed in claim 4, wherein the protrusion protrudes from the metal layer.

6. The semiconductor light emitting device as claimed in claim 1, wherein the roughness of the first conductive semiconductor layer is disposed on a second region different from the first region in the upper surface of the first conductive semiconductor layer.

7. The semiconductor light emitting device as claimed in claim 6, wherein the first and second semiconductor layers include a nitride-based material.

8. The semiconductor light emitting device as claimed in claim 1, wherein the conductive support member has a width wider than that of the reflective layer and has a thickness thicker than that of the metal layer.

9. The semiconductor light emitting device as claimed in claim 8, wherein the first and second layers are formed with the same thickness.

10. The semiconductor light emitting device as claimed in claim 8, wherein the metal layer has a different width from the width of the reflective layer.

11. The semiconductor light emitting device as claimed in claim 1, wherein at least one of the first layer and the second layer is formed of a different material from the second conductive semiconductor layer.

12. The semiconductor light emitting device as claimed in claim 11, wherein the first layer and the second layer is formed of a different material from a material of the metal layer.

13. The semiconductor light emitting device as claimed in claim 12, wherein the metal layer comprises at least one of Pt and Pd.

14. The semiconductor light emitting device as claimed in claim 13, wherein the conductive support member includes Cu material.

15. A semiconductor light emitting device having a reflective layer comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;

an electrode on a first region of a top surface of the first conductive semiconductor layer;

a conductive support member formed of a metal under the light emitting structure;

a metal layer between the light emitting structure and the conductive support member;

wherein a bottom part of the metal layer is formed in the conductive support member;

wherein the metal layer has a protrusion on the conductive support member, and

the reflective layer between the metal layer and the light emitting structure,

wherein the light emitting structure includes a nitride-based material,

wherein the metal layer is physically contacted with a lower surface of the reflective layer,

wherein the reflective layer includes a first layer and a second layer,

wherein the first layer has a different refractive index from the second layer, and

wherein the conductive support member has a width wider than that of the reflective layer and has a thickness thicker than that of the metal layer.

16. The semiconductor light emitting device as claimed in claim 15, wherein the first layer has thickness of 35 nm to 80 nm and the second layer has thickness of 30 nm to 75 nm.

17. The semiconductor light emitting device as claimed in claim 15, wherein the first conductive semiconductor layer includes an AlGaN-based semiconductor layer and the second conductive semiconductor layer includes an AlGaN-based semiconductor layer.

18. The semiconductor light emitting device as claimed in claim 15, comprising roughness disposed on a second region of the top surface of the first conductive semiconductor layer.

19. The semiconductor light emitting device as claimed in claim 18, wherein the first region is formed with a flat surface.

20. The semiconductor light emitting device as claimed in claim 18, wherein at least one of the first layer and the second layer is formed of a different material from the second conductive semiconductor layer and the metal layer.