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Junction gate field effect transistor structure having n-channel

  • US 8,618,583 B2
  • Filed: 05/16/2011
  • Issued: 12/31/2013
  • Est. Priority Date: 05/16/2011
  • Status: Active Grant
First Claim
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1. A junction gate field effect transistor (JFET) comprising:

  • a p-type substrate having a p-region therein;

    an n-channel over the p-region;

    a p-well abutting each of the n-channel and the p-region; and

    n-doped enhancement regions within the n-channel, each n-doped enhancement region separated from the p-region,wherein the p-well abuts each of an n-well and a deep n-region, the deep n-region being disposed between the p-well and the p-type substrate,wherein the deep n-region abuts the n-well,wherein the n-channel is distinct from the n-well, andwherein the p-well is disposed between the n-well and the n-channel, and the p-well separates the n-well from the n-channel.

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