Shielded gate trench MOSFET with increased source-metal contact
First Claim
1. A semiconductor device formed on a semiconductor substrate having a substrate top surface, comprising:
- a gate trench extending from the substrate top surface into the semiconductor substrate;
a gate electrode in the gate trench;
a gate top dielectric material disposed over the gate electrode;
a body region adjacent to the gate trench;
a source region embedded in the body region;
a contact trench that allows contact between the source region and the body region; and
a metal layer disposed over at least a portion of a gate trench opening, at least a portion of the source region, and at least a portion of the contact trench, wherein;
the source region has a curved sidewall portion that is adjacent to the gate trench, and that extends above the gate top dielectric material.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device formed on a semiconductor substrate having a substrate top surface, includes: a gate trench extending from the substrate top surface into the semiconductor substrate; a gate electrode in the gate trench; a dielectric material disposed over the gate electrode; a body region adjacent to the gate trench; a source region embedded in the body region, at least a portion of the source region extending above the dielectric material; a contact trench that allows contact such as electrical contact between the source region and the body region; and a metal layer disposed over at least a portion of a gate trench opening, at least a portion of the source region, and at least a portion of the contact trench.
38 Citations
12 Claims
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1. A semiconductor device formed on a semiconductor substrate having a substrate top surface, comprising:
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a gate trench extending from the substrate top surface into the semiconductor substrate; a gate electrode in the gate trench; a gate top dielectric material disposed over the gate electrode; a body region adjacent to the gate trench; a source region embedded in the body region; a contact trench that allows contact between the source region and the body region; and a metal layer disposed over at least a portion of a gate trench opening, at least a portion of the source region, and at least a portion of the contact trench, wherein; the source region has a curved sidewall portion that is adjacent to the gate trench, and that extends above the gate top dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification