Patternable dielectric film structure with improved lithography and method of fabricating same

• US 8,618,663 B2
• Filed: 09/20/2007
• Issued: 12/31/2013
• Est. Priority Date: 09/20/2007
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: International Business Machines Corporation
• Inventors: Lin, Qinghuang, Neumayer, Deborah A.
• Primary Examiner(s): HSIEH, HSIN YI
• Application Number:
  US11/858,636
• Publication Number:
  US 20090079076A1
• Time in Patent Office: 2,294 Days
• Field of Search: 257/758, 257/E23.145
• US Class Current: 257/758
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/0276 using an anti-reflective coating anti-reflective coating for lithography in general G03F7/09
• CPC Class Codes: H01L 21/31 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques encapsulating layers H01L21/56; After treatment of these layers; Selection of materials for these layers
• CPC Class Codes: H01L 21/3121 Layers comprising organo-silicon compounds
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/3148 Silicon Carbide layers
• CPC Class Codes: H01L 21/76808 involving intermediate temporary filling with material
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76835 Combinations of two or more different dielectric layers having a low dielectric constant H01L21/76832 takes precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 2221/1031 Dual damascene by forming vias in the via-level dielectric prior to deposition of the trench-level dielectric
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 : OLED

Abstract

The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate, said inorganic antireflective coating is vapor deposited and comprises atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La; forming at least one interconnect pattern within the at least one patternable low-k material; and curing the at least one patternable low-k material. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.

Claims

1. An interconnect structure comprising:

at least one patterned and cured low-k dielectric material located on a surface of a patterned inorganic antireflective coating that is located atop a substrate, wherein said patterned inorganic antireflective coating is a permanent element of said interconnect structure and comprises a single layer of atoms of M, C and H wherein M is at least one of Ta, Ni, Hf and La, and said at least one patterned and cured low-k dielectric material and said patterned inorganic antireflective coating having conductively filled regions embedded therein, wherein said at least one patterned and cured low-k dielectric material comprises a functionalized polymer having one or more irradiation/acid-sensitive imageable groups, said functionalized polymer is selected from the group consisting of a carbosilane and an oxycarbosilane.

2. The interconnect structure of claim 1 wherein said patterned inorganic antireflective coating further comprises atoms of O, N, S, F or mixtures thereof.

3. The interconnect structure of claim 1 wherein said cured functionalized polymer further comprises a functionalized sacrificial pore generator.

9. The interconnect structure of claim 1 wherein a patterned dielectric cap is interposed between the patterned inorganic antireflective coating and said substrate.

11. The interconnect structure of claim 1 wherein said one or more irradiation/acid-sensitive imageable groups are negative-tone acid-sensitive functional groups.

12. The interconnect structure of claim 1 wherein said one or more irradiation/acid-sensitive imageable groups are positive-tone acid-sensitive functional groups.

13. The interconnect structure of claim 1 wherein said substrate comprises an insulating layer, and said patterned inorganic antireflective coating has a bottommost surface that is in direct contact with an uppermost surface of said insulating layer.

14. The interconnect structure of claim 1 wherein said cured functionalized polymer is an oxycarbosilane.

15. The interconnect structure of claim 1 wherein said at least one patterned and cured low-k dielectric material is derived from a composition comprising a functionalized polymer, copolymer or a blend of a polymer and a copolymer, a photoacid generator, a base additive and a solvent.

16. The interconnect structure of claim 15 wherein said composition further comprises a crosslinking agent.

17. The interconnect structure of claim 1 wherein said functionalized polymer is a carbosilane.

4. An interconnect structure comprising:

a lower patterned and cured low-k material layer located on a surface of a patterned inorganic antireflective coating that is located atop a substrate, wherein said patterned inorganic antireflective coating is a permanent element of said interconnect structure and comprises a single layer of atoms of M, C and H wherein M is at least one of Ta, Ni, Hf and La, and an upper patterned and cured low-k material layer located on said lower patterned and cured low-k material layer, said lower and upper patterned and cured low-k material layers, and said patterned inorganic antireflective coating having conductively filled regions, wherein said lower and upper patterned and cured low-k material layers each comprise a cured functionalized polymer having one or more irradiation/acid-sensitive imageable groups, said functionalized polymer is selected from the group consisting of a carbosilane and an oxycarbosilane.

5. The interconnect structure of claim 4 wherein said patterned inorganic antireflective coating further comprises atoms of O, N, S, F or mixtures thereof.

6. The interconnect structure of claim 4 wherein said conductively filled regions within said lower patterned and cured low-k material layer are conductively filled vias, and said conductively filled regions within said upper patterned and cured low-k material layer are conductively filled lines.

10. The interconnect structure of claim 4 wherein a patterned dielectric cap is interposed between the patterned inorganic antireflective coating and said substrate.

7. An interconnect structure comprising:

at least one patterned and cured low-k dielectric material located on a surface of a patterned inorganic antireflective coating that is located atop a substrate, said patterned inorganic antireflective coating is a permanent element of said interconnect structure and comprises atoms of M, C and H wherein M is selected from the group consisting of Ta, Ni, Hf and La, and said at least one patterned and cured low-k dielectric material and said patterned inorganic antireflective coating having conductively filled regions embedded therein, wherein said at least one patterned and cured low-k dielectric material comprise a functionalized polymer having one or more irradiation/acid-sensitive imageable groups.

8. An interconnect structure comprising:

a lower patterned and cured low-k material layer located on a surface of a patterned inorganic antireflective coating that is located atop a substrate, said patterned inorganic antireflective coating is a permanent element of said interconnect structure and comprises atoms of M, C and H wherein M is selected from the group consisting of Ta, Ni, Hf and La, and an upper patterned and cured low-k material layer located on said lower patterned and cured low-k material layer, said lower and upper patterned and cured low-k material layers and said patterned inorganic antireflective coating having conductively filled regions, wherein said lower and upper patterned and cured low-k material layers each comprise a cured functionalized polymer having one or more irradiation/acid-sensitive imageable groups.