Thin film transistor, display device and liquid crystal display device and method for manufacturing the same
First Claim
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1. A method for manufacturing a display device, comprising the steps of:
- forming a gate electrode over a first substrate;
forming a gate insulating film over the gate electrode;
forming a semiconductor film over the gate insulating film;
forming a source electrode and a drain electrode over the semiconductor film;
forming a first protection diode and a second protection diode; and
discharging a material of a color filter by a droplet discharge method over the gate insulating film after forming the source electrode and the drain electrode,wherein the first protection diode is electrically connected to one of the source electrode and the drain electrode, andwherein the second protection diode is electrically connected to the gate electrode.
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Abstract
As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.
47 Citations
27 Claims
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1. A method for manufacturing a display device, comprising the steps of:
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forming a gate electrode over a first substrate; forming a gate insulating film over the gate electrode; forming a semiconductor film over the gate insulating film; forming a source electrode and a drain electrode over the semiconductor film; forming a first protection diode and a second protection diode; and discharging a material of a color filter by a droplet discharge method over the gate insulating film after forming the source electrode and the drain electrode, wherein the first protection diode is electrically connected to one of the source electrode and the drain electrode, and wherein the second protection diode is electrically connected to the gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a display device, comprising the steps of:
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forming a gate electrode over a first substrate; forming a gate insulating film over the gate electrode; forming a semiconductor film over the gate insulating film; forming a source electrode and a drain electrode over the semiconductor film; forming a first protection diode and a second protection diode; and discharging a material of a black matrix by a droplet discharge method over the source electrode and the drain electrode, wherein the first protection diode is electrically connected to one of the source electrode and the drain electrode, and wherein the second protection diode is electrically connected to the gate electrode. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A method for manufacturing a display device, comprising the steps of:
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forming a gate electrode over a first substrate; forming a gate insulating film over the gate electrode; forming a semiconductor film over the gate insulating film; forming a source electrode and a drain electrode over the semiconductor film; forming a color filter over the gate insulating film after forming the source electrode and the drain electrode; forming a first protection diode and a second protection diode; and discharging a material of a black matrix by a droplet discharge method over the source electrode and the drain electrode, wherein the first protection diode is electrically connected to one of the source electrode and the drain electrode, and wherein the second protection diode is electrically connected to the gate electrode. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Maekawa, Shinji, Kanno, Yohei
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Primary Examiner(s)Stahl, Mike
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Application NumberUS13/552,845Publication NumberTime in Patent Office530 DaysField of SearchNoneUS Class Current349/106CPC Class CodesH01L 21/28008 Making conductor-insulator-...H01L 21/288 from a liquid, e.g. electro...H01L 2224/73265 Layer and wire connectorsH01L 27/1292 using liquid deposition, e....H01L 29/66765 Lateral single gate single ...H01L 29/78669 with inverted-type structur...H01L 29/78678 with inverted-type structur...
