X-Y address type solid state image pickup device and method of producing the same
First Claim
Patent Images
1. A method of producing a pixel, comprising:
- forming a device layer in a substrate, the device layer comprising a photo-electric conversion device and active device; and
forming a wiring layer over a first side of the device layer, the wiring layer comprising wirings for the active device and the first side of the device layer being opposite to a light receiving sidewherein the step of forming the device layer includes forming a photo-electric conversion region configured to receive incident light at the light receiving side of the device layer, andwherein the step of forming the device layer further includes forming a floating diffusion portion.
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Abstract
In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
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Citations
12 Claims
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1. A method of producing a pixel, comprising:
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forming a device layer in a substrate, the device layer comprising a photo-electric conversion device and active device; and forming a wiring layer over a first side of the device layer, the wiring layer comprising wirings for the active device and the first side of the device layer being opposite to a light receiving side wherein the step of forming the device layer includes forming a photo-electric conversion region configured to receive incident light at the light receiving side of the device layer, and wherein the step of forming the device layer further includes forming a floating diffusion portion. - View Dependent Claims (2, 3)
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4. A method of producing a pixel, the method comprising the steps of:
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forming a device layer on a first side of a substrate, the device layer comprising a photo-electric conversion device and an active device; forming a wiring layer over a first side of the device layer, the wiring layer comprising wirings for the active device and the first side of the device layer facing away from the substrate; and forming a substrate support layer on a first side of the wiring layer, the first side of the wire layer facing away from the device layer, wherein the step of forming the device layer includes forming a photo-electric conversion region configured to receive incident light at a second side of the device layer, the second side of the device layer facing toward the substrate, and wherein the step of forming the device layer further includes forming the photo-electric conversion region to have a greater surface area on the second side of the device layer than the first side of the device layer.
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5. A method of producing a pixel, comprising:
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forming a device layer in a substrate, the device layer comprising a photo-electric conversion device and active device; and forming a wiring layer over a first side of the device layer, the wiring layer comprising wirings for the active device and the first side of the device layer being opposite to a light receiving side, wherein the step of forming the device layer includes forming a photo-electric conversion region configured to receive incident light at the light receiving side of the device layer, and wherein the step of forming the device layer further includes forming a shallow impurity region in the photo-electric conversion region at a surface of the second side of the device layer. - View Dependent Claims (6, 7)
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8. A method of producing a pixel, comprising:
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forming a device layer in a substrate, the device layer comprising a photo-electric conversion device and active device; and forming a wiring layer over a first side of the device layer, the wiring layer comprising wirings for the active device and the first side of the device layer being opposite to a light receiving side wherein the step of forming the device layer includes forming a photo-electric conversion region configured to receive incident light at the light receiving side of the device layer, and wherein the step of forming the device layer further includes forming a p-type region at a surface portion of the photo-electric conversion region at the first side of the device layer.
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9. A method of producing a pixel, comprising:
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forming a device layer in a substrate, the device layer comprising a photo-electric conversion device and active device; and forming a wiring layer over a first side of the device layer, the wiring layer comprising wirings for the active device and the first side of the device layer being opposite to a light receiving side, polishing a second side of the substrate until the substrate becomes a predetermined thickness, the second side of the substrate facing opposite from the first side of the substrate, wherein the step of forming the device layer includes forming a photo-electric conversion region configured to receive incident light at the light receiving side of the device layer, and wherein the step of polishing the second side includes polishing the second side of the substrate until the thickness of the substrate is in the range of 5 to 15 μ
m.
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10. A method of producing a pixel, the method comprising the steps of:
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forming a device layer on a first side of a substrate, the device layer comprising a photo-electric conversion device and an active device; forming a wiring layer over a first side of the device layer, the wiring layer comprising wirings for the active device and the first side of the device layer facing away from the substrate; and
forming an SiO2 layer on the second side of the substrate,wherein the step of forming the device layer includes forming a photo-electric conversion region configured to receive incident light at a second side of the device layer, the second side of the device layer facing toward the substrate, and wherein the step of forming the device layer further includes forming the photo-electric conversion region to have a greater surface area on the second side of the device layer than the first side of the device layer. - View Dependent Claims (11, 12)
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Specification