Self-aligned protection layer for copper post structure
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate;
a conductive post overlying and electrically connected to the substrate;
a manganese-containing protection layer on a surface of the conductive post; and
a cap layer over a top surface of the conductive post.
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Accused Products
Abstract
A semiconductor device includes a semiconductor substrate and a conductive post overlying and electrically connected to the substrate. The semiconductor device further includes a manganese-containing protection layer on a surface of the conductive post. The semiconductor device further includes a cap layer over a top surface of the conductive post. A method of forming a semiconductor device includes forming a bond pad region on a semiconductor substrate. The method further includes forming a conductive post overlying and electrically connected to the bond pad region. The method further includes forming a protection layer on a surface of the conductive post, wherein the protection layer comprises manganese (Mn). The method further includes forming a cap layer on a top surface of the conductive post.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate; a conductive post overlying and electrically connected to the substrate; a manganese-containing protection layer on a surface of the conductive post; and a cap layer over a top surface of the conductive post. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a semiconductor device, the method comprising:
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forming a bond pad region on a semiconductor substrate; forming a conductive post overlying and electrically connected to the bond pad region; forming a protection layer on a surface of the conductive post, wherein the protection layer comprises manganese (Mn); and forming a cap layer on a top surface of the conductive post prior to forming the protection layer. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method of forming a semiconductor device, the method comprising:
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forming a bond pad region on a semiconductor substrate; forming a conductive post overlying and electrically connected to the bond pad region, the conductive post comprising a copper-manganese alloy; forming a manganese-containing protection layer on sidewalls of the conductive post; and forming a cap layer over a top surface of the conductive post. - View Dependent Claims (17, 18, 19, 20)
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Specification