Planar phase-change memory cell with parallel electrical paths

• US 8,624,217 B2
• Filed: 06/25/2010
• Issued: 01/07/2014
• Est. Priority Date: 06/25/2010
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Franceschini, Michele M., Karidis, John P.
• Primary Examiner(s): BERNSTEIN, ALLISON
• Application Number:
  US12/823,924
• Publication Number:
  US 20110317481A1
• Time in Patent Office: 1,292 Days
• Field of Search: 257 2- 5, 257E29002-E29006, 365/148, 365/163
• US Class Current: 257/4
• CPC Class Codes: G11C 11/5678 using amorphous/crystalline phase transition storage elements
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods
• CPC Class Codes: G11C 2013/0083 Write to perform initialising, forming process, electro forming or conditioning
• CPC Class Codes: G11C 8/10 Decoders
• CPC Class Codes: H10B 63/80 Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
• CPC Class Codes: H10N 70/063 by etching of pre-deposited switching material layers, e.g. lithography
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/823 adapted for essentially horizontal current flow, e.g. bridge type devices
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe

Abstract

A planar phase change memory cell with parallel electrical paths. The memory cell includes a first conductive electrode region having a length greater than its width and an axis aligned with the length. The memory cell also includes a second conductive electrode region having an edge oriented at an angle to the axis of the first conductive electrode region. The memory cell further includes an insulator region providing a lateral separation distance between an end of the first conductive electrode region and the edge of the second conductive electrode region, the insulator region including at least part of an insulator film and the lateral separation distance is responsive to the thickness of the insulator film.

Claims

1. An integrated electronic apparatus, having a substantially planar surface, the apparatus comprising:

a first conductive electrode region having a length greater than its width and an axis aligned with the length, wherein the first conductive electrode region is a plated trench wall of a first trench aligned parallel to the length, and wherein the width is about 5 nanometers;

a second conductive electrode region having an edge oriented at an angle to the axis of the first conductive electrode region, wherein the second conductive electrode region is in a second trench perpendicular to the first trench;

an insulator region providing a lateral separation distance between an end of the first conductive electrode region and the edge of the second conductive electrode region, the insulator region comprising at least part of an insulator film and the lateral separation distance is based on the thickness of the insulator film, wherein the thickness of the insulator film ranges from 3 to 20 nanometers, and wherein the insulator film is in the second trench underneath the second conductive electrode region; and

a layer of a patterned storage material that at least partially covers the first conductive electrode region and the second conductive electrode region.

2. The apparatus of claim 1, wherein the width of the first conductive electrode region is based on a thickness of a plating on the plated trench wall.

3. The apparatus of claim 2, wherein the first conductive electrode region is one of titanium, tungsten, titanium nitride, and titanium aluminum nitride.

4. The apparatus of claim 1, wherein the storage material is a phase change material.

5. The apparatus of claim 1, wherein the angle is substantially a right angle.