Semiconductor device

• US 8,624,239 B2
• Filed: 05/11/2011
• Issued: 01/07/2014
• Est. Priority Date: 05/20/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nishijima, Tatsuji
• Primary Examiner(s): Lee, Jae
• Assistant Examiner(s): WITHERS, GRANT S
• Application Number:
  US13/105,384
• Publication Number:
  US 20110284837A1
• Time in Patent Office: 972 Days
• Field of Search: 257/43, 257/57, 257/E29.273
• US Class Current: 257/43
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

In a transistor, a drain electrode to which a high electric field is applied is formed over a flat surface, and an end portion of a gate electrode on the drain electrode side in a channel width direction and an end portion of the gate electrode in a channel length direction are covered with an oxide semiconductor with a gate insulating layer between the gate electrode and the oxide semiconductor layer, so that withstand voltage of the transistor is improved. Further, a semiconductor device for high power application, in which the transistor is used, can be provided.

Claims

1. A semiconductor device comprising:

a gate electrode;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

an insulating layer over the oxide semiconductor layer, the insulating layer comprising a first contact hole and a second contact hole;

a first electrode over the insulating layer, the first electrode comprising a first layer and a second layer; and

a second electrode over the insulating layer, the second electrode comprising a third layer and a fourth layer,

wherein the first layer is in direct contact with the oxide semiconductor layer and has a tapered shape,

wherein the second layer is over the insulating layer and in direct contact with the first layer through the first contact hole,

wherein the third layer is in direct contact with the oxide semiconductor layer and has a tapered shape,

wherein the fourth layer is over the insulating layer and in direct contact with the third layer through the second contact hole,

wherein the oxide semiconductor layer overlaps with the first layer and the second layer, and

wherein the oxide semiconductor layer overlaps with the third layer and the fourth layer.

5. The semiconductor device according to claim 1, wherein the oxide semiconductor layer comprises indium.

9. The semiconductor device according to claim 1, wherein the semiconductor device is a power MOSFET.

16. The semiconductor device according to claim 1,

wherein the first electrode is opposite the second electrode in a channel width direction.

2. A semiconductor device comprising:

a gate electrode;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

a first insulating layer over the oxide semiconductor layer, the first insulating layer comprising a first contact hole and a second contact hole;

a second insulating layer over the first insulating layer, the second insulating layer comprising a third contact hole and a fourth contact hole;

a first electrode comprising a first layer and a second layer;

a second electrode comprising a third layer and a fourth layer; and

a conductive layer between the first electrode and the second electrode,

wherein the first layer is in direct contact with the oxide semiconductor layer and has a tapered shape,

wherein the second layer is over the insulating layer and in direct contact with the first layer through the first contact hole and the third contact hole,

wherein the third layer is in direct contact with the oxide semiconductor layer and has a tapered shape,

wherein the fourth layer is over the insulating layer and in direct contact with the third layer through the second contact hole and the fourth contact hole,

wherein the oxide semiconductor layer overlaps with the first layer and the second layer, and

wherein the oxide semiconductor layer overlaps with the third layer and the fourth layer.

6. The semiconductor device according to claim 2, wherein the oxide semiconductor layer comprises indium.

10. The semiconductor device according to claim 2, wherein the semiconductor device is a power MOSFET.

17. The semiconductor device according to claim 2,

wherein the first electrode is opposite the second electrode in a channel width direction.

3. A semiconductor device comprising:

a gate electrode;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

an insulating layer over the oxide semiconductor layer, the insulating layer comprising a first contact hole, a second contact hole, a third contact hole, and a fourth contact hole;

a first electrode over the insulating layer, the first electrode being electrically connected to a first source electrode and a second source electrode; and

a second electrode over the insulating layer, the second electrode being electrically connected to a first drain electrode and a second drain electrode,

wherein the first source electrode is in direct contact with the oxide semiconductor layer through the first contact hole,

wherein the first drain electrode is between the first source electrode and the second source electrode and in direct contact with the oxide semiconductor layer through the second contact hole,

wherein the second source electrode is between the first drain electrode and the second drain electrode and in direct contact with the oxide semiconductor layer through the third contact hole, and

wherein the second drain electrode is in direct contact with the oxide semiconductor layer through the fourth contact hole.

7. The semiconductor device according to claim 3, wherein the oxide semiconductor layer comprises indium.

11. The semiconductor device according to claim 3, wherein the semiconductor device is a power MOSFET.

14. The semiconductor device according to claim 3,

wherein the first electrode and the second electrode respectively comprise a stacked structure.

4. A semiconductor device comprising:

a gate electrode;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

a first insulating layer over the oxide semiconductor layer, the first insulating layer comprising a first contact hole, a second contact hole, a third contact hole, and a fourth contact hole;

a second insulating layer over the first insulating layer, the second insulating layer comprising a fifth contact hole, a sixth contact hole, a seventh contact hole, and an eighth contact hole;

a first electrode over the second insulating layer, the first electrode being electrically connected to a first source electrode and a second source electrode; and

a second electrode over the second insulating layer, the second electrode being electrically connected to a first drain electrode and a second drain electrode,

wherein the first source electrode is in direct contact with the oxide semiconductor layer through the first contact hole and the fifth contact hole,

wherein the first drain electrode is between the first source electrode and the second source electrode and in direct contact with the oxide semiconductor layer through the second contact hole and the sixth contact hole,

wherein the second source electrode is between the first drain electrode and the second drain electrode and in direct contact with the oxide semiconductor layer through the third contact hole and the seventh contact hole, and

wherein the second drain electrode is in direct contact with the oxide semiconductor layer through the fourth contact hole and the eighth contact hole.

8. The semiconductor device according to claim 4, wherein the oxide semiconductor layer comprises indium.

12. The semiconductor device according to claim 4, wherein the semiconductor device is a power MOSFET.

13. The semiconductor device according to claim 4, further comprising a conductive layer between the first source electrode and the first drain electrode.

15. The semiconductor device according to claim 4,

wherein the first electrode and the second electrode respectively comprise a stacked structure.