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Top gate thin film transistor and display apparatus including the same

  • US 8,624,240 B2
  • Filed: 07/21/2011
  • Issued: 01/07/2014
  • Est. Priority Date: 08/03/2010
  • Status: Active Grant
First Claim
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1. A top gate thin film transistor, comprising on a substrate:

  • a source electrode layer;

    a drain electrode layer;

    an oxide semiconductor layer;

    a gate insulating layer;

    a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn, and Sn; and

    a protective layer containing hydrogen, wherein;

    the gate insulating layer is formed on a channel region of the oxide semiconductor layer;

    the gate electrode layer is formed on the gate insulating layer;

    the protective layer is formed on the gate electrode layer and a region except the channel region of the oxide semiconductor layer; and

    a width of the gate insulating layer is smaller than a width of the oxide semiconductor layer in a channel length direction.

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