Thin film transistor including a light-transmitting semiconductor film and active matrix substrate
First Claim
Patent Images
1. A thin film transistor comprising:
- a gate electrode;
a semiconductor layer disposed opposite to the gate electrode with a gate insulating film interposed therebetween;
a source electrode placed above the semiconductor layer and electrically connected with the semiconductor layer; and
a drain electrode placed above the semiconductor layer and electrically connected with the semiconductor layer, whereinthe semiconductor layer includes a light-transmitting semiconductor film and a conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film,the conductive film is formed not to protrude from the light-transmitting semiconductor film,the conductive film is formed in separate parts with a channel part interposed between the source electrode and the drain electrode,the source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the conductive film,the conductive film is made of aluminum or an alloy film predominantly composed of aluminum.
2 Assignments
0 Petitions
Accused Products
Abstract
A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.
-
Citations
13 Claims
-
1. A thin film transistor comprising:
-
a gate electrode; a semiconductor layer disposed opposite to the gate electrode with a gate insulating film interposed therebetween; a source electrode placed above the semiconductor layer and electrically connected with the semiconductor layer; and a drain electrode placed above the semiconductor layer and electrically connected with the semiconductor layer, wherein the semiconductor layer includes a light-transmitting semiconductor film and a conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film, the conductive film is formed not to protrude from the light-transmitting semiconductor film, the conductive film is formed in separate parts with a channel part interposed between the source electrode and the drain electrode, the source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the conductive film, the conductive film is made of aluminum or an alloy film predominantly composed of aluminum. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A thin film transistor comprising:
-
a gate electrode; a semiconductor layer disposed opposite to the gate electrode with a gate insulating film interposed therebetween; a source electrode placed above the semiconductor layer and electrically connected with the semiconductor layer; and a drain electrode placed above the semiconductor layer and electrically connected with the semiconductor layer, wherein the semiconductor layer includes a light-transmitting semiconductor film and a conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film, the conductive film is formed not to protrude from the light-transmitting semiconductor film, the conductive film is formed in separate parts with a channel part interposed between the source electrode and the drain electrode, the source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the conductive film, and the conductive film is made of copper or an alloy film predominantly composed of copper. - View Dependent Claims (13)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeTrivale Technologies, LLC (Vector Capital Corporation)
-
Original AssigneeMitsubishi Electric Corporation
-
InventorsNoguchi, Reiko, Inoue, Kazunori, Aoki, Masaru, Iwasaka, Toshihiko
-
Primary Examiner(s)Soward, Ida M
-
Application NumberUS13/346,193Publication NumberTime in Patent Office729 DaysField of Search257/57, 257/56, 257/66, 257/72, 257/E29.117, 257/E29.151, 257/E29.273, 257/43US Class Current257/57CPC Class CodesH01L 27/1225 with semiconductor material...H01L 29/41733 for thin film transistors w...H01L 29/7869 having a semiconductor body...
