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Thin film transistor including a light-transmitting semiconductor film and active matrix substrate

  • US 8,624,244 B2
  • Filed: 01/09/2012
  • Issued: 01/07/2014
  • Est. Priority Date: 01/21/2011
  • Status: Active Grant
First Claim
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1. A thin film transistor comprising:

  • a gate electrode;

    a semiconductor layer disposed opposite to the gate electrode with a gate insulating film interposed therebetween;

    a source electrode placed above the semiconductor layer and electrically connected with the semiconductor layer; and

    a drain electrode placed above the semiconductor layer and electrically connected with the semiconductor layer, whereinthe semiconductor layer includes a light-transmitting semiconductor film and a conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film,the conductive film is formed not to protrude from the light-transmitting semiconductor film,the conductive film is formed in separate parts with a channel part interposed between the source electrode and the drain electrode,the source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the conductive film,the conductive film is made of aluminum or an alloy film predominantly composed of aluminum.

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