Semiconductor device and manufacturing method thereof
First Claim
1. A semiconductor device comprising:
- a first pixel over a substrate, and comprising;
a first TFT comprising;
a first portion of a first semiconductor layer comprising a first channel region, a pair of first LDD regions in contact with the first channel region, and first source and drain regions on the outside of the pair of first LDD regions;
a first portion of a gate insulating film over the first portion of the first semiconductor layer; and
a first gate electrode over the first portion of the gate insulating film, and formed from a conductive layer,a capacitor comprising;
a first layer comprising a second portion of the first semiconductor layer;
a second layer over the first layer, and comprising a second portion of the gate insulating film; and
a third layer over the second layer, and formed from the conductive layer,an insulating film comprising silicon nitride, and over and in contact with the first gate electrode and the gate insulating film; and
a first pixel electrode over the insulating film, and electrically connected to the first TFT,wherein the first semiconductor layer is overlapped with a second pixel electrode in a second pixel, andwherein a thickness of the gate insulating film over the first channel region is thicker than a thickness of the gate insulating film over each of the first source and drain regions, anda driver circuit over the substrate, and comprising an n-channel TFT and a p-channel TFT,wherein the n-channel TFT comprises;
a second semiconductor layer comprising a second channel region, a pair of second LDD regions in contact with the second channel region, and second source and drain regions disposed on the outside of the pair of second LDD regions;
a third portion of the gate insulating film provided over the second semiconductor layer; and
a second gate electrode provided over the third portion of the gate insulating film, andwherein a thickness of the gate insulating film over the second channel region is thicker than a thickness of the gate insulating film over each of the second source and drain regions.
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Abstract
By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.
53 Citations
40 Claims
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1. A semiconductor device comprising:
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a first pixel over a substrate, and comprising; a first TFT comprising; a first portion of a first semiconductor layer comprising a first channel region, a pair of first LDD regions in contact with the first channel region, and first source and drain regions on the outside of the pair of first LDD regions; a first portion of a gate insulating film over the first portion of the first semiconductor layer; and a first gate electrode over the first portion of the gate insulating film, and formed from a conductive layer, a capacitor comprising; a first layer comprising a second portion of the first semiconductor layer; a second layer over the first layer, and comprising a second portion of the gate insulating film; and a third layer over the second layer, and formed from the conductive layer, an insulating film comprising silicon nitride, and over and in contact with the first gate electrode and the gate insulating film; and a first pixel electrode over the insulating film, and electrically connected to the first TFT, wherein the first semiconductor layer is overlapped with a second pixel electrode in a second pixel, and wherein a thickness of the gate insulating film over the first channel region is thicker than a thickness of the gate insulating film over each of the first source and drain regions, and a driver circuit over the substrate, and comprising an n-channel TFT and a p-channel TFT, wherein the n-channel TFT comprises; a second semiconductor layer comprising a second channel region, a pair of second LDD regions in contact with the second channel region, and second source and drain regions disposed on the outside of the pair of second LDD regions; a third portion of the gate insulating film provided over the second semiconductor layer; and a second gate electrode provided over the third portion of the gate insulating film, and wherein a thickness of the gate insulating film over the second channel region is thicker than a thickness of the gate insulating film over each of the second source and drain regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a first pixel over a substrate, and comprising; a first TFT comprising; a first portion of a first semiconductor layer comprising a first channel region, a pair of first LDD regions in contact with the first channel region, and first source and drain regions on the outside of the pair of first LDD regions; a first portion of a gate insulating film over the first portion of the first semiconductor layer; and a first gate electrode over the first portion of the gate insulating film, and formed from a conductive layer, a capacitor comprising; a first layer comprising a second portion of the first semiconductor layer; a second layer over the first layer, and comprising a second portion of the gate insulating film; and a third layer over the second layer, and formed from the conductive layer, an insulating film comprising silicon nitride, and over and in contact with the first gate electrode and the gate insulating film; and a first pixel electrode over the insulating film, and electrically connected to the first TFT, wherein the first semiconductor layer is overlapped with a second pixel electrode in a second pixel, and wherein a thickness of the gate insulating film over the first channel region is thicker than a thickness of the gate insulating film over each of the first source and drain regions, and a driver circuit over the substrate, and comprising a second TFT, wherein the second TFT comprises; a second semiconductor layer comprising a second channel region, a pair of second LDD regions in contact with the second channel region, and second source and drain regions disposed on the outside of the pair of second LDD regions; a third portion of the gate insulating film provided over the second semiconductor layer; and a second gate electrode provided over the third portion of the gate insulating film, and wherein a thickness of the gate insulating film over the second channel region is thicker than a thickness of the gate insulating film over each of the second source and drain regions. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A semiconductor device comprising:
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a first pixel over a substrate, and comprising; a TFT comprising; a first portion of a semiconductor layer comprising a channel region, a pair of LDD regions in contact with the channel region, and source and drain regions on the outside of the pair of LDD regions; a first portion of a gate insulating film over the first portion of the semiconductor layer; and a gate electrode over the first portion of the gate insulating film and formed from a conductive layer, a capacitor comprising; a first layer comprising a second portion of the semiconductor layer; a second layer over the first layer, and comprising a second portion of the gate insulating film; and a third layer over the second layer, and formed from the conductive layer, an insulating film comprising silicon nitride, and over and in contact with the gate electrode and the gate insulating film; and a first pixel electrode over the insulating film, and electrically connected to the TFT, wherein the semiconductor layer is overlapped with a second pixel electrode in a second pixel, and wherein a thickness of the gate insulating film over the channel region is thicker than a thickness of the gate insulating film over each of the source and drain regions. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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Specification