Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same

• US 8,624,276 B2
• Filed: 08/07/2012
• Issued: 01/07/2014
• Est. Priority Date: 10/19/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Pun Jae, Lee, Jin Hyun, Park, Ki Yeol, Cho, Myong Soo
• Primary Examiner(s): Sefer, A.
• Application Number:
  US13/568,553
• Publication Number:
  US 20120299042A1
• Time in Patent Office: 518 Days
• Field of Search: 257/79, 257/89, 438/26
• US Class Current: 257/89
• CPC Class Codes: F02M 19/0235 Arrangements of several spray nozzles not provided for in F02M3/00 or F02M11/00
• CPC Class Codes: F02M 9/127 Axially movable throttle valves concentric with the axis of the mixture passage
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Claims

1. A semiconductor light emitting device comprising:

a conductive substrate;

a first electrode layer disposed on the conductive substrate;

an insulating layer disposed on the first electrode layer;

a second electrode layer disposed on the insulating layer, the second electrode layer including a first surface;

a second conductivity type semiconductor layer disposed on the first surface of the second electrode layer;

an active layer disposed on the second conductivity type semiconductor layer; and

a first conductivity type semiconductor layer disposed on the active layer,

wherein the first surface of the second electrode layer has an exposed area on which the first conductivity type layer, the active layer, and the second conductivity type layer are not disposed,

the first electrode layer comprises at least one contact hole, the contact hole electrically connected to the first conductivity type semiconductor layer, the contact hole electrically insulated from the second conductivity type semiconductor layer and the active layer, and the contact hole extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer, and

the exposed area of the second electrode layer is disposed at a corner of the first surface of the second electrode layer.

2. The semiconductor light emitting device of claim 1, further comprising an electrode pad unit formed at the exposed area of the second electrode layer.

3. The semiconductor light emitting device of claim 1, wherein the exposed area of the second electrode layer is disposed along an outer perimeter of the first surface of the second electrode layer.

4. The semiconductor light emitting device of claim 1, wherein the second electrode layer reflects light generated from the active layer.

5. The semiconductor light emitting device of claim 4, wherein the second electrode layer comprises one metal selected from a group consisting of Ag, Al, and Pt.

6. The semiconductor light emitting device of claim 1, wherein an irregular pattern is formed on the surface of the first conductivity type semiconductor layer.

7. The semiconductor light emitting device of claim 6, wherein the irregular pattern has a photonic crystal structure.

8. The semiconductor light emitting device of claim 1, wherein the conductive substrate comprises one metal selected from a group consisting of Au, Ni, Cu, and W.

9. The semiconductor light emitting device of claim 1, wherein the conductive substrate comprises one selected from a group consisting of Si, Ge, and GaAs.

10. The semiconductor light emitting device of claim 1,

wherein an outer perimeter of the exposed area of the first surface comprises a first portion of the outer perimeter and a second portion of the outer perimeter, wherein the second portion of the outer perimeter includes the entire outer perimeter of the exposed area except for the first portion of the outer perimeter,

wherein the first portion contacts each of two side surfaces of the second electrode layer that are joined at the corner of the first surface of the second electrode layer,

wherein the second portion contacts a stacked structure including the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer.

11. A semiconductor light emitting device, comprising:

a conductive substrate;

a first electrode layer disposed on the conductive substrate;

an insulating layer disposed on the first electrode layer;

a second electrode layer disposed on the insulating layer, the second electrode layer including a first surface;

a second conductivity type semiconductor layer disposed on the first surface of the second electrode layer;

an active layer disposed on the second conductivity type semiconductor layer; and

a first conductivity type semiconductor layer disposed on the active layer,

wherein the second electrode layer has an exposed area on the first surface on which the first conductivity type layer, the active layer, and the second conductivity type layer are not disposed,

wherein the first electrode layer comprises at least one contact hole, the contact hole electrically connected to the first conductivity type semiconductor layer, and electrically insulated from the second conductivity type semiconductor layer and the active layer, and the contact hole extends from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer, and

wherein the exposed area of the second electrode layer is a region exposed by a via hole formed through the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer.

12. The semiconductor light emitting device of claim 11, wherein the diameter of the via hole increases in a direction from the second electrode layer toward the first conductivity type semiconductor layer.

13. The semiconductor light emitting device of claim 11, wherein an insulating layer is formed on an inner surface of the via hole.

14. A method of manufacturing a semiconductor light emitting device, the method comprising:

sequentially laminating a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer having a first surface, an insulating layer, a first electrode layer, and a conductive substrate;

forming an exposed area on which the first conductivity type layer, the active layer, the second conductivity type layer are not disposed, on the first surface of the second electrode layer;

forming at least one contact hole in the first electrode layer, the contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer,

wherein the second conductivity type semiconductor layer is disposed on the first surface of the second electrode layer,

wherein the first surface of the second electrode layer includes a corner at which two sides are joined, and

wherein the exposed area of the second electrode layer is disposed at the corner of the second electrode layer such that the exposed area contacts each of the two sides that are joined at the corner.

15. The method of claim 14, wherein the forming an exposed area of the second electrode layer comprises mesa etching the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer.

16. The method of claim 14, wherein the conductive substrate is formed by a plating method and laminated.

17. The method of claim 14, wherein the conductive substrate is laminated by a substrate bonding method.

18. The method of claim 14, wherein the exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer is formed such that the second electrode layer has a region exposed by a via hole extending through the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer.