Non-polar semiconductor light emission devices

• US 8,624,292 B2
• Filed: 06/08/2011
• Issued: 01/07/2014
• Est. Priority Date: 02/14/2011
• Status: Active Grant

• Current Assignee: Siphoton Incorporated
• Original Assignee: Siphoton Incorporated
• Inventors: Pan, Shaoher X., Chen, Jay, Heuken, Michael, Payne, Justin A.
• Primary Examiner(s): MONTALVO, EVA Y
• Application Number:
  US13/155,857
• Publication Number:
  US 20120205617A1
• Time in Patent Office: 944 Days
• Field of Search: 257/103, 257/79, 257/80, 257/98
• US Class Current: 257/103
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light emitting device includes a silicon substrate having a (100) upper surface. The (100) upper surface has a recess, the recess being defined in part by (111) surfaces of the silicon substrate. The light emitting device includes a GaN crystal structure over one of the (111) surfaces which has a non-polar plane and a first surface along the non-polar plane. Light emission layers over the first surface have at least one quantum well comprising GaN.

Claims

1. A light emitting device, comprising:

a silicon substrate having a (111) surface;

a GaN crystal structure over the (111) surface of the silicon substrate, the GaN crystal structure having a non-polar plane and a first surface parallel to the non-polar plane that most strongly emits light; and

light emission layers for strongly emitting light over the first surface, the light emission layers having at least one quantum well comprising GaN.

2. The light emitting device of claim 1, wherein the first surface is substantially perpendicular to the (111) surface of the silicon substrate.

3. The light emitting device of claim 1, wherein the first surface is substantially perpendicular to the m-axis in the (1-100) direction of the GaN crystal structure.

4. The light emitting device of claim 1, wherein the GaN crystal structure is doped and is electrically conductive, the light emitting device further comprising:

an upper electrode layer on the light emission layers, wherein the light emission layers are configured to emit light when an electric field is applied across the light emission layers between the GaN crystal structure and the upper electrode layer.

5. The light emitting device of claim 1, wherein the quantum well comprises InGaN and GaN layers.

6. A light emitting device, comprising:

a silicon substrate having a (111) surface;

a GaN crystal structure over the (111) surface of the silicon substrate, the GaN crystal structure having a non-polar plane and a first surface parallel to the non-polar plane; and

light emission layers over the first surface, the light emission layers having at least one quantum well comprising GaN, wherein the first surface is bordered with an edge of the (111) surface of the silicon substrate.

7. A light emitting device, comprising:

a silicon substrate having a (111) surface;

a GaN crystal structure over the (111) surface of the silicon substrate, the GaN crystal structure having a non-polar plane and a first surface parallel to the non-polar plane; and

light emission layers over the first surface, the light emission layers having at least one quantum well comprising GaN, wherein the GaN crystal structure comprises a semi-polar plane and a second surface parallel to the semi-polar plane.

8. The light emitting device of claim 7, wherein the GaN crystal structure comprises a polar plane and a third surface parallel to the polar plane.

9. The light emitting device of claim 8, wherein the second surface is positioned between the first surface and the third surface.

10. The light emitting device of claim 9, wherein the first surface and the second surface intercept each other at an angle between about 142 degrees and about 162 degrees.

11. The light emitting device of claim 9, wherein the second surface and the third surface intercept each other at an angle between about 108 degrees and about 128 degrees.

12. A light emitting device, comprising:

a silicon substrate having a (111) surface;

a GaN crystal structure over the (111) surface of the silicon substrate, the GaN crystal structure having a non-polar plane and a first surface parallel to the non-polar plane; and

light emission layers over the first surface, the light emission layers having at least one quantum well comprising GaN, further comprising a reflective layer between the (111) surface of the silicon substrate and the GaN crystal structure.

13. The light emitting device of claim 12, further comprising a buffer layer between the reflective layer and the (111) surface of the silicon substrate.

14. A light emitting device, comprising:

a silicon substrate having a (111) surface;

a GaN crystal structure over the (111) surface of the silicon substrate, the GaN crystal structure having a non-polar plane and a first surface parallel to the non-polar plane; and

light emission layers over the first surface, the light emission layers having at least one quantum well comprising GaN, wherein the silicon substrate further comprises;

a (100) upper surface; and

a recess, in part defined by the (111) surface of the silicon substrate, formed in the (100) upper surface.

15. The light emitting device of claim 14, wherein the recess has the shape of a trench, an inverse pyramid, or a truncated inverse pyramid.

16. A light emitting device, comprising:

a silicon substrate having a (100) upper surface, the (100) upper surface having a recess, the recess being defined in part by (111) surfaces of the silicon substrate;

a GaN crystal structure over one of the (111) surfaces, the GaN crystal structure having a non-polar plane and a first surface parallel to the non-polar plane; and

light emission layers over the first surface, the light emission layers having at least one quantum well comprising GaN.

17. The light emitting device of claim 16, wherein the recess has the shape of a trench, an inverse pyramid, or a truncated inverse pyramid.

18. The light emitting device of claim 16, wherein the first surface is substantially perpendicular to the (111) surface of the silicon substrate.

19. The light emitting device of claim 16, wherein the first surface is bordered with an edge of the (111) surface of the silicon substrate.

20. The light emitting device of claim 16, wherein the GaN crystal structure comprises a semi-polar plane and a second surface parallel to the semi-polar plane, wherein the GaN crystal structure comprises a polar plane and a third surface parallel to the polar plane, wherein the second surface is positioned between the first surface and the third surface.

21. The light emitting device of claim 20, wherein the first surface and the second surface intercept each other at an angle between about 142 degrees and about 162 degrees.

22. The light emitting device of claim 20, wherein the second surface and the third surface intercept each other at an angle between about 108 degrees and about 128 degrees.

23. The light emitting device of claim 16, wherein the GaN crystal structure is doped and is electrically conductive, the light emitting device further comprising:

an upper electrode layer on the light emission layers, wherein the light emission layers are configured to emit light when an electric field is applied across the light emission layers between the GaN crystal structure and the upper electrode layer.

24. The light emitting device of claim 16, further comprising a reflective layer between the GaN crystal structure and one of the (111) surfaces of the silicon substrate.

25. The light emitting device of claim 24, further comprising a buffer layer between the reflective layer and the one of the (111) surfaces of the silicon substrate.