Structure and method for post oxidation silicon trench bottom shaping

• US 8,624,302 B2
• Filed: 01/27/2011
• Issued: 01/07/2014
• Est. Priority Date: 02/05/2010
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Ring, Matthew A., Prosack, Henry G. Jr.
• Primary Examiner(s): Smoot, Stephen W
• Assistant Examiner(s): Chin, Edward
• Application Number:
  US13/015,448
• Publication Number:
  US 20110193142A1
• Time in Patent Office: 1,076 Days
• Field of Search: 257/E21.008, 257/E27.011, 257/E29.256, 257/E27.016, 257/E27.092, 257/E21.545, 257/E29.02, 257/343, 257/272, 257/339, 257/342, 257/506, 438/386, 438/423
• US Class Current: 257/272
• CPC Class Codes: H01L 21/02238 silicon in uncombined form, i.e. pure silicon
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/30655 comprising alternated and repeated etching and passivation steps, e.g. Bosch process
• CPC Class Codes: H01L 28/92 made by patterning layers, e.g. by etching conductive layers
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/66181 Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
• CPC Class Codes: H01L 29/66681 Lateral DMOS transistors, i.e. LDMOS transistors
• CPC Class Codes: H01L 29/7816 Lateral DMOS transistors, i.e. LDMOS transistors
• CPC Class Codes: H01L 29/7817 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H10B 12/0387 Making the trench

Abstract

A method of fabricating an LFCC device includes forming a first trench in a substrate that extends vertically from an upper surface to a depth within the substrate, the first trench having first sidewalls, a first bottom, and a pattern formed on the first sidewalls near the first bottom of the trench, and forming an oxide layer on the first sidewalls and first bottom of the first trench that leaves a second trench located within the first trench and is separated from the first trench by the oxide layer. The second trench has second sidewalls that are substantially vertical without showing the pattern and a second bottom that is substantially flat. The pattern compensates for the difference in oxidation rates between the bottom of the first trench and the first sidewalls. The LFCC structure includes a first trench with the pattern.

Claims

1. A semiconductor device comprising:

a trench region disposed within a silicon substrate, the trench region including;

an outer trench having an outer trench sidewall defining an upper portion and a bottom portion of the outer trench, the upper portion of the outer trench having a first width that is substantially constant, the outer trench sidewall including a pattern in the bottom portion of the outer trench, the pattern including;

a first portion that decreases in width from the first width to a second width;

a second portion of substantially the second width;

a third portion that increases in width from the second width to a third width;

a fourth portion that decreases in width from the third width to a fourth width; and

an outer trench bottom surface that is substantially flat;

an oxide layer disposed on the sidewall of the outer trench and the bottom portion of the outer trench such that the oxide layer forms an inner trench within the outer trench, the inner trench having an inner trench sidewall that is substantially vertical and an inner trench bottom surface that is substantially flat; and

a floating coupled capacitor including a conductive material disposed within the inner trench.

2. The semiconductor device of claim 1, further comprising an active drift region that includes a plurality of alternating PN junctions.

3. The semiconductor device of claim 1, further comprising:

an active drift region of a first conductivity type; and

a plurality of reduced surface field (resurf) layers of a second conductivity type,

the active drift region and the plurality of resurf layers being disposed such that they form a plurality of alternating PN junctions.

4. The semiconductor device of claim 1, further comprising:

a source region; and

a drain region,

the floating coupled capacitor being disposed between the source region and the drain region.

5. The semiconductor device of claim 1, wherein the conductive material is disposed within the inner trench such that no void is formed.

6. The semiconductor device of claim 1, further comprising a reduced surface field (resurf) layer of a first conductivity type that is electrically connected to the silicon substrate, such that an electrode-substrate electrical coupling is established in the floating coupled capacitor.

7. The semiconductor device of claim 1, wherein the outer trench includes:

a (111) silicon crystallographic plane along the outer trench bottom surface;

a (110) silicon crystallographic plane along a surface of the outer trench sidewall in the upper portion of the outer trench; and

at least one silicon crystallographic plane along a surface of the pattern that compensates for a difference in oxidation rates between the (111) silicon crystallographic plane and the (110) silicon crystallographic plane.

8. A semiconductor device comprising:

an outer trench including;

a bottom portion of the outer trench including a pattern; and

a sidewall of the outer trench in an upper portion of the outer trench, the sidewall of the outer trench being substantially vertical, the upper portion of the outer trench having a first width that is substantially constant; and

an oxide layer disposed on the sidewall of the outer trench and disposed on the bottom portion of the outer trench such that the oxide layer forms an inner trench within the outer trench, the inner trench having a sidewall of the inner trench that is substantially vertical,

the pattern of the outer trench being configured to compensate for a difference in oxidation rates between the bottom portion of the outer trench and the sidewall of the outer trench, the pattern including;

a first portion that decreases in width from the first width to a second width;

a second portion of substantially the second width;

a third portion that increases in width from the second width to a third width; and

a fourth portion that decreases in width.

9. The semiconductor device of claim 8, further comprising a conductive material disposed within the inner trench to form a floating coupled capacitor.

10. The semiconductor device of claim 8, wherein the outer trench comprises:

a (111) silicon crystallographic plane along a bottom surface of the outer trench;

a (110) silicon crystallographic plane along a surface of the sidewall of the outer trench; and

at least one silicon crystallographic plane along a surface of the pattern that compensates for the difference in oxidation rates, the difference in oxidation rates being between an oxidation rate of the (111) silicon crystallographic plane and an oxidation rate of the (110) silicon crystallographic plane.

11. The semiconductor device of claim 8, further comprising an active drift region that includes a plurality of alternating PN junctions.

12. The semiconductor device of claim 8, further comprising:

an active drift region of a first conductivity type; and

a plurality of reduced surface field (resurf) layers of a second conductivity type,

the active drift region and the plurality of resurf layers being arranged such that they form a plurality of alternating PN junctions.

13. The semiconductor device of claim 8, further comprising an active drift region including a plurality of vertically stacked PN junctions, the active drift region being divided horizontally by the outer trench.

14. The semiconductor device of claim 9, wherein the conductive material is disposed within the inner trench such that no void is formed.

15. The semiconductor of claim 9, further comprising a reduced surface field (resurf) layer of a first conductivity type that is electrically connected to a substrate, such that an electrode-substrate electrical coupling is established in the floating coupled capacitor.

16. A transistor comprising:

an active drift region configured to, when in an on state, conduct electricity between a source region and a drain region; and

a conductive material disposed within an inner trench,

the inner trench including an inner trench sidewall that is substantially vertical, and

the inner trench being separated from an outer trench by an oxide layer, the outer trench having a pattern in a bottom portion of the outer trench and an outer trench sidewall in an upper portion of the outer trench, the upper portion of the outer trench having a substantially constant first width, the pattern including;

a first portion that decreases in width from the first width to a second width;

a second portion of substantially the second width;

a third portion that increases in width from the second width to a third width; and

a fourth portion that decreases in width.

17. The transistor of claim 16, further comprising:

a plurality of alternating PN junctions disposed in the active region; and

an inactive floating coupled capacitor that includes the conductive material disposed within the inner trench.

18. The transistor of claim 16, wherein the outer trench includes:

a (111) silicon crystallographic plane along a bottom surface of the outer trench;

a (110) silicon crystallographic plane along a surface of the outer trench sidewall; and

at least one silicon crystallographic plane along a surface of the pattern that compensates for a difference in oxidation rates between the (111) silicon crystallographic plane and the (110) silicon crystallographic plane.