Redundancy design with electro-migration immunity and method of manufacture
First Claim
1. A structure comprising a cluster-of-via structure at an intersection between inter-level wires, the cluster-of-via structure comprising a plurality of vias each of which are filled with a metal and lined with a liner material, wherein at least adjacent sidewalls of two adjacent ones of the plurality of vias provided in a same layer of an insulator material are abutting and in contact with one another by a shared common liner material provided on the sidewalls of the adjacent ones of the plurality of vias in the same layer of the insulator material such that the insulator material is absent therebetween, the common liner material between the plurality of vias, is structured to lower current loading between the inter-level wires.
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Accused Products
Abstract
An IC interconnect for high direct current (DC) that is substantially immune to electro-migration (EM) damage, and a method of manufacture of the IC interconnect are provided. A structure includes a cluster-of-via structure at an intersection between inter-level wires. The cluster-of-via structure includes a plurality of vias each of which are filled with a metal and lined with a liner material. At least two adjacent of the vias are in contact with one another and the plurality of vias lowers current loading between the inter-level wires.
19 Citations
17 Claims
- 1. A structure comprising a cluster-of-via structure at an intersection between inter-level wires, the cluster-of-via structure comprising a plurality of vias each of which are filled with a metal and lined with a liner material, wherein at least adjacent sidewalls of two adjacent ones of the plurality of vias provided in a same layer of an insulator material are abutting and in contact with one another by a shared common liner material provided on the sidewalls of the adjacent ones of the plurality of vias in the same layer of the insulator material such that the insulator material is absent therebetween, the common liner material between the plurality of vias, is structured to lower current loading between the inter-level wires.
Specification