×

Redundancy design with electro-migration immunity and method of manufacture

  • US 8,624,395 B2
  • Filed: 02/21/2012
  • Issued: 01/07/2014
  • Est. Priority Date: 05/06/2008
  • Status: Active Grant
First Claim
Patent Images

1. A structure comprising a cluster-of-via structure at an intersection between inter-level wires, the cluster-of-via structure comprising a plurality of vias each of which are filled with a metal and lined with a liner material, wherein at least adjacent sidewalls of two adjacent ones of the plurality of vias provided in a same layer of an insulator material are abutting and in contact with one another by a shared common liner material provided on the sidewalls of the adjacent ones of the plurality of vias in the same layer of the insulator material such that the insulator material is absent therebetween, the common liner material between the plurality of vias, is structured to lower current loading between the inter-level wires.

View all claims
  • 6 Assignments
Timeline View
Assignment View
    ×
    ×