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Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements

  • US 8,625,337 B2
  • Filed: 05/05/2011
  • Issued: 01/07/2014
  • Est. Priority Date: 05/06/2010
  • Status: Expired due to Fees
First Claim
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1. A probabilistic resistive memory, comprising:

  • a cluster of bi-stable switching elements;

    means for detecting a state of a resistance through the cluster of bi-stable switching elements;

    means for determining at least one programming current attribute based on the detected state;

    means for applying the programming current to the cluster of bi-stable switching elements according to the at least one determined programming current attribute; and

    means for iterating the detecting, the determining and the applying until a given programming completion state is reached.

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