Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements
First Claim
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1. A probabilistic resistive memory, comprising:
- a cluster of bi-stable switching elements;
means for detecting a state of a resistance through the cluster of bi-stable switching elements;
means for determining at least one programming current attribute based on the detected state;
means for applying the programming current to the cluster of bi-stable switching elements according to the at least one determined programming current attribute; and
means for iterating the detecting, the determining and the applying until a given programming completion state is reached.
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Abstract
A probabilistic programming current is injected into a cluster of bi-stable probabilistic switching elements, the probabilistic programming current having parameters set to result in a less than unity probability of any given bi-stable switching element switching, and a resistance of the cluster of bi-stable switching elements is detected. The probabilistic programming current is injected and the resistance of the cluster state detected until a termination condition is met. Optionally the termination condition is detecting the resistance of the cluster of bi-stable switching elements at a value representing a multi-bit data.
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6 Claims
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1. A probabilistic resistive memory, comprising:
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a cluster of bi-stable switching elements; means for detecting a state of a resistance through the cluster of bi-stable switching elements; means for determining at least one programming current attribute based on the detected state; means for applying the programming current to the cluster of bi-stable switching elements according to the at least one determined programming current attribute; and means for iterating the detecting, the determining and the applying until a given programming completion state is reached. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification