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Method and apparatus for measuring isoelectric point using field effect transistor

  • US 8,628,650 B2
  • Filed: 12/16/2008
  • Issued: 01/14/2014
  • Est. Priority Date: 08/08/2008
  • Status: Expired due to Fees
First Claim
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1. A method for measuring an isoelectric point, comprising:

  • providing a field effect transistor comprising a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes;

    providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes;

    providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes; and

    determining the isoelectric points of the field effect transistor or materials disposed on the field effect transistor using a difference between the first and second current values.

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