Method and apparatus for measuring isoelectric point using field effect transistor

• US 8,628,650 B2
• Filed: 12/16/2008
• Issued: 01/14/2014
• Est. Priority Date: 08/08/2008
• Status: Expired due to Fees

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Ah, Chil Seong, Kim, Ansoon, Park, Chan Woo, Ahn, Chang-Geun, Yang, Jong-Heon, Baek, In Bok, Kim, Taeyoub, Sung, Gun Yong, Park, Seon-Hee, Yu, Han Young
• Primary Examiner(s): DINH, BACH T
• Application Number:
  US13/058,120
• Publication Number:
  US 20110139637A1
• Time in Patent Office: 1,855 Days
• Field of Search: 204450-470, 204546-550, 204600-621, 204641-645
• US Class Current: 204/459
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors

Abstract

Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.

Claims

1. A method for measuring an isoelectric point, comprising:

providing a field effect transistor comprising a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes;

providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes;

providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes; and

determining the isoelectric points of the field effect transistor or materials disposed on the field effect transistor using a difference between the first and second current values.

2. The method of claim 1, wherein the first electrolyte solution has a same pH with the second electrolyte solution.

3. The method of claim 2, wherein the isoelectric point is a pH of the electrolyte solutions when the difference between the first and second current values becomes 0.

4. The method of claim 1, further comprising varying a pH of each of the first and second electrolyte solutions according to a result of the difference between the first and second current values.

5. The method of claim 4, wherein the measuring of the first and second current values, the determining of the isoelectric point of the field effect transistor or the material disposed on the field effect transistor, the varying of the pH of the electrolyte solution are repeated until the difference between the first and second current values becomes 0 where the pH of the electrolyte solution can be determined.

6. The method of claim 4, wherein the field effect transistor is one of P-type and N-type field effect transistors.

7. The method of claim 6, wherein the varying of the pH of the electrolyte solution comprises reducing the pH of the electrolyte solution when the field effect transistor is the P-type field effect transistor and the second current value is less than the first current value.

8. The method of claim 6, wherein the varying of the pH of the electrolyte solution comprises increasing the pH of the electrolyte solution when the field effect transistor is the P-type field effect transistor and the second current value is greater than the first current value.

9. The method of claim 6, wherein the varying of the pH of the electrolyte solution comprises increasing the pH of the electrolyte solution when the field effect transistor is the N-type field effect transistor and the second current value is less than the first current value.

10. The method of claim 6, wherein the varying of the pH of the electrolyte solution comprises reducing the pH of the electrolyte solution when the field effect transistor is the N-type field effect transistor and the second current value is greater than the first current value.

11. The method of claim 1, further comprising fixing a biomolecule or other molecule on the channel region of the field effect transistor after the field effect transistor is provided.

12. The method of claim 11, wherein the biomolecule is selected from the group consisting of a protein, a nucleic acid, an organic molecule, and an inorganic molecule.

13. The method of claim 12, wherein the nucleic acid is selected from the group consisting of DNA, RNA, PNA, LNA, and a combination thereof.

14. The method of claim 12, wherein the protein is selected from the group consisting of an enzyme, a matrix protein, an antigen, an antibody, a ligand, an aptamer, and a receptor.

15. The method of claim 11, further comprising forming a functional group representing the isoelectric point on a surface of the channel region before the biomolecule is fixed.

16. The method of claim 1, wherein the field effect transistor further comprises a doping layer, which is doped with an opposite conductive material to the substrate, in the channel region.

17. The method of claim 1, wherein the FET comprises a semiconductor oxide or metal oxide ceramic and the determining of the isoelectric point comprises an isoelectric point of the semiconductor oxide or metal oxide ceramic.

18. An apparatus for measuring an isoelectric point, comprising:

a field effect transistor comprising a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes;

a first electrolyte solution supply unit for supplying a first electrolyte solution having a first concentration to the channel region;

a second electrolyte solution supply unit for supplying a second electrolyte solution having a second concentration to the channel region, wherein the second electrolyte solution has a same pH as the first electrolyte solution and the first concentration is less than the second concentration; and

a current measuring unit measuring a first current value and a second current value flowing along the channel region when the first and second electrolyte solutions are supplied, respectively;

wherein the apparatus is configured to determine the isoelectric points of the FET or materials disposed on the FET using a difference between the first current value and the second current value of the current measuring unit.

19. The apparatus of claim 18, further comprises a controller that adjusts the pH of the first and second electrolyte solutions depending on a current variation of the channel region when the first and second electrolyte solutions are supplied.

20. The apparatus of claim 18, wherein the isoelectric point is determined when the difference between current values becomes 0, the current values are measured by the current measuring unit when the first and second electrolyte solutions are each supplied on the channel region.