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Thin film transistor, method for manufacturing the same, and semiconductor device

  • US 8,629,000 B2
  • Filed: 01/08/2013
  • Issued: 01/14/2014
  • Est. Priority Date: 02/20/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a gate electrode including copper over a substrate;

    forming a gate insulating layer over the gate electrode;

    forming an oxide semiconductor layer over the gate insulating layer;

    forming a conductive layer including titanium over the oxide semiconductor layer; and

    performing a thermal treatment, whereby oxygen in the oxide semiconductor layer is diffused into the conductive layer.

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