Structure and method to form EDRAM on SOI substrate
First Claim
1. A method for forming a memory device comprising:
- providing a semiconductor substrate;
forming a trench capacitor in the semiconductor substrate, the trench capacitor including an inner electrode comprised of a conductive fill material within a trench;
forming a buried dielectric layer on the semiconductor substrate and on the trench capacitor;
forming a first stud in the buried dielectric layer in electrical communication with the conductive material that is present within the trench and a second stud in the buried dielectric layer in electrical communication with the semiconductor substrate;
forming a semiconductor layer on the buried dielectric layer; and
forming a semiconductor device atop the semiconductor layer over the trench, the semiconductor device comprising a gate structure, a source region and a drain region, wherein at least the gate structure, the source region and the drain region of the semiconductor device is formed after the trench capacitor, and the drain region is in electrical communication with the first stud, wherein the gate structure of the semiconductor device is substantially centrally positioned over the trench capacitor.
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Accused Products
Abstract
A memory device is provided that in one embodiment includes a trench capacitor located in a semiconductor substrate including an outer electrode provided by the semiconductor substrate, an inner electrode provided by a conductive fill material, and a node dielectric layer located between the outer electrode and the inner electrode; and a semiconductor device positioned centrally over the trench capacitor. The semiconductor device includes a source region, a drain region, and a gate structure, in which the semiconductor device is formed on a semiconductor layer that is separated from the semiconductor substrate by a dielectric layer. A first contact is present extending from an upper surface of the semiconductor layer into electrical contact with the semiconductor substrate, and a second contact from the drain region of the semiconductor device in electrical contact to the conductive material within the at least one trench.
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Citations
20 Claims
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1. A method for forming a memory device comprising:
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providing a semiconductor substrate; forming a trench capacitor in the semiconductor substrate, the trench capacitor including an inner electrode comprised of a conductive fill material within a trench; forming a buried dielectric layer on the semiconductor substrate and on the trench capacitor; forming a first stud in the buried dielectric layer in electrical communication with the conductive material that is present within the trench and a second stud in the buried dielectric layer in electrical communication with the semiconductor substrate; forming a semiconductor layer on the buried dielectric layer; and forming a semiconductor device atop the semiconductor layer over the trench, the semiconductor device comprising a gate structure, a source region and a drain region, wherein at least the gate structure, the source region and the drain region of the semiconductor device is formed after the trench capacitor, and the drain region is in electrical communication with the first stud, wherein the gate structure of the semiconductor device is substantially centrally positioned over the trench capacitor. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for forming a memory device comprising:
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providing a semiconductor substrate having at least one trench capacitor formed therein; forming a buried dielectric layer on the semiconductor substrate; forming at least one semiconductor device atop the buried dielectric layer comprising a gate structure, a source region and a drain region, wherein at least the gate structure, the source region and the drain region of the semiconductor device is formed after the trench capacitor, wherein the gate structure of the semiconductor device is substantially centrally positioned over the trench capacitor; and forming a first contact through the buried dielectric layer in electrical contact with the semiconductor substrate and a second contact from the drain region for each of the at least one semiconductor device through the buried dielectric layer into electrical contact to an inner electrode for each of the at least one trench capacitor. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for forming a memory device comprising:
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providing a semiconductor substrate; forming a trench capacitor in the semiconductor substrate, the trench capacitor including an inner electrode comprised of a conductive fill material within a trench; forming a buried dielectric layer on the semiconductor substrate and on the trench capacitor; forming a first stud in the buried dielectric layer in electrical communication with the conductive material that is present within the trench and a second stud in the buried dielectric layer in electrical communication with the semiconductor substrate; forming a semiconductor layer on the buried dielectric layer; and forming a semiconductor device atop the semiconductor layer over the trench, the semiconductor device comprising a gate structure, a source region and a drain region, wherein the gate structure of the semiconductor device is substantially centrally positioned over the trench capacitor. - View Dependent Claims (17, 18, 19, 20)
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Specification