Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
First Claim
1. A method of growing a planar non-polar Gallium-Nitride epitaxial film, comprising:
- providing an m-plane sapphire substrate;
cleaning and annealing the m-plane sapphire substrate in a hydrogen environment at a temperature of approximately 900°
C. for a duration of approximately 10 to 20 minutes;
nitridizing the annealed m-plane sapphire substrate in an ammonia environment at a temperature of approximately 600°
C. for approximately 3 to 10 minutes;
growing an intermediate layer of Aluminum Nitride (AlN) or Aluminum Gallium Nitride (AlGaN) at a temperature of approximately 600°
C. on the nitridized and annealed m-plane sapphire substrate for approximately 30 seconds;
increasing the temperature in an atmosphere of ammonia and hydrogen by approximately 15°
C. per minute for 30 minutes to effect the recrystallization of the intermediate layer; and
growing non-polar m-plane Gallium-Nitride on the intermediate layer at a temperature of approximately 1040°
C. using hydride vapor phase epitaxy (HVPE).
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Abstract
A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.
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Citations
1 Claim
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1. A method of growing a planar non-polar Gallium-Nitride epitaxial film, comprising:
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providing an m-plane sapphire substrate; cleaning and annealing the m-plane sapphire substrate in a hydrogen environment at a temperature of approximately 900°
C. for a duration of approximately 10 to 20 minutes;nitridizing the annealed m-plane sapphire substrate in an ammonia environment at a temperature of approximately 600°
C. for approximately 3 to 10 minutes;growing an intermediate layer of Aluminum Nitride (AlN) or Aluminum Gallium Nitride (AlGaN) at a temperature of approximately 600°
C. on the nitridized and annealed m-plane sapphire substrate for approximately 30 seconds;increasing the temperature in an atmosphere of ammonia and hydrogen by approximately 15°
C. per minute for 30 minutes to effect the recrystallization of the intermediate layer; andgrowing non-polar m-plane Gallium-Nitride on the intermediate layer at a temperature of approximately 1040°
C. using hydride vapor phase epitaxy (HVPE).
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Specification