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Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)

  • US 8,629,065 B2
  • Filed: 11/06/2009
  • Issued: 01/14/2014
  • Est. Priority Date: 11/06/2009
  • Status: Active Grant
First Claim
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1. A method of growing a planar non-polar Gallium-Nitride epitaxial film, comprising:

  • providing an m-plane sapphire substrate;

    cleaning and annealing the m-plane sapphire substrate in a hydrogen environment at a temperature of approximately 900°

    C. for a duration of approximately 10 to 20 minutes;

    nitridizing the annealed m-plane sapphire substrate in an ammonia environment at a temperature of approximately 600°

    C. for approximately 3 to 10 minutes;

    growing an intermediate layer of Aluminum Nitride (AlN) or Aluminum Gallium Nitride (AlGaN) at a temperature of approximately 600°

    C. on the nitridized and annealed m-plane sapphire substrate for approximately 30 seconds;

    increasing the temperature in an atmosphere of ammonia and hydrogen by approximately 15°

    C. per minute for 30 minutes to effect the recrystallization of the intermediate layer; and

    growing non-polar m-plane Gallium-Nitride on the intermediate layer at a temperature of approximately 1040°

    C. using hydride vapor phase epitaxy (HVPE).

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