Liner formation in 3DIC structures
First Claim
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1. A method comprising:
- forming an opening in a substrate; and
forming a liner dielectric in the opening using spraying, wherein the liner dielectric comprises a sidewall portion on a sidewall of the opening and a bottom portion on a bottom of the opening, and wherein thicknesses of the sidewall portion increase substantially continuously from top to bottom.
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Abstract
An integrated circuit structure includes a semiconductor substrate; a through-semiconductor via (TSV) opening extending into the semiconductor substrate; and a TSV liner in the TSV opening. The TSV liner includes a sidewall portion on a sidewall of the TSV opening and a bottom portion at a bottom of the TSV opening. The bottom portion of the TSV liner has a bottom height greater than a middle thickness of the sidewall portion of the TSV liner.
38 Citations
18 Claims
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1. A method comprising:
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forming an opening in a substrate; and forming a liner dielectric in the opening using spraying, wherein the liner dielectric comprises a sidewall portion on a sidewall of the opening and a bottom portion on a bottom of the opening, and wherein thicknesses of the sidewall portion increase substantially continuously from top to bottom. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of forming an integrated circuit structure, the method comprising:
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providing a semiconductor substrate; forming a through-semiconductor via (TSV) opening in the substrate semiconductor; forming a TSV liner in the opening using a method selected from the group consisting essentially of spraying, spin-on coating, and combinations thereof, wherein the TSV liner comprises; a sidewall portion on a sidewall of the opening; and a bottom portion at a bottom of the opening, and wherein a top end of the TSV liner is lower than a top of the TSV opening, wherein the bottom portion of the TSV liner has a thickness between about 5 percent and about 20 percent of a depth of the TSV opening; and filling a conductive material into the TSV opening to form a TSV. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15)
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16. A method comprising:
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forming an opening in a semiconductor substrate; and forming a liner dielectric in the opening, wherein the liner dielectric comprises a sidewall portion on a sidewall of the opening and a bottom portion on a bottom of the opening, and wherein the step of forming the liner comprises; placing the semiconductor substrate with the opening facing up; rotating the semiconductor substrate with a first speed; spraying a chemical on the semiconductor substrate; after the step of spraying the chemical, stopping rotating the semiconductor substrate; and after the step of stopping rotating the semiconductor substrate, rotating the semiconductor substrate with a second speed greater than the first speed. - View Dependent Claims (17, 18)
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Specification