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Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio

  • US 8,629,067 B2
  • Filed: 12/16/2010
  • Issued: 01/14/2014
  • Est. Priority Date: 12/30/2009
  • Status: Active Grant
First Claim
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1. A method of forming a dielectric layer on a substrate in a plasma-free substrate processing region in a substrate processing chamber, the method comprising:

  • flowing precursors comprising hydrogen (H2) and nitrogen (N2) into a plasma region to produce a radical precursor, wherein a nitrogen;

    hydrogen atomic flow ratio into the plasma region is less than 1;

    3, and wherein the precursors are devoid of ammonia;

    combining a vapor or gas silicon-containing precursor with the radical-nitrogen precursor in the plasma-free substrate processing region; and

    depositing the dielectric layer on the substrate, wherein the dielectric layer is initially flowable as deposited.

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