Detection beyond the standard radiation noise limit using spectrally selective absorption

• US 8,629,398 B2
• Filed: 05/29/2009
• Issued: 01/14/2014
• Est. Priority Date: 05/30/2008
• Status: Active Grant

• Current Assignee: Kagan Binder PLLC, Regents of The University of Minnesota (University of Minnesota)
• Original Assignee: Regents of The University of Minnesota (University of Minnesota)
• Inventors: Talghader, Joseph J., Shea, Ryan P., Gawarikar, Anand S.
• Primary Examiner(s): Porta, David
• Assistant Examiner(s): BOOSALIS, FANI POLYZOS
• Application Number:
  US12/996,704
• Publication Number:
  US 20110240860A1
• Time in Patent Office: 1,691 Days
• Field of Search: 250/338.1, 250/338.4, 250/339.04, 250/339.07, 250/340, 250/332
• US Class Current: 250/338.4
• CPC Class Codes: G01J 5/02 Constructional details
• CPC Class Codes: G01J 5/023 Particular leg structure or construction or shape; Nanotubes
• CPC Class Codes: G01J 5/04 Casings
• CPC Class Codes: G01J 5/046 Materials; Selection of thermal materials
• CPC Class Codes: G01J 5/08 Optical arrangements
• CPC Class Codes: G01J 5/0853 having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid

Abstract

High sensitivity thermal detectors that perform beyond the blackbody radiation noise limit are described. Thermal detectors, as described herein, use spectrally selective materials that absorb strongly in the wavelength region of the desired signal but only weakly or not at all in the primary thermal emission band. Exemplary devices that can be made in accordance with the present invention include microbolometers containing semiconductors that absorb in the MWIR and/or THz range but not the LWIR.

Claims

1. A thermal detector for sensing infrared radiation comprising an infrared absorber that is spectrally selective, the absorber suspended by one or more electrically conductive support structures so incoming radiation impinges on at least a portion of the infrared absorber and wherein said portion of the infrared absorber absorbs strongly in a desired spectral wavelength region and weakly in a second spectral wavelength region that corresponds with the primary thermal emission region for that temperature.

2. The thermal detector of claim 1, wherein the desired wavelength region comprises one or more of the SWIR, MWIR and THz and the primary thermal emission region comprises the LWIR.

3. The thermal detector of claim 1, wherein the infrared sensor comprises one or more of a bolometer and a thermoelectric sensor.

4. The thermal detector of claim 3, wherein the bolometer comprises a thin-film temperature sensitive resistor electrically connected to the one or more electrically conductive support structures.

5. The thermal detector of claim 4, wherein the thin-film temperature sensitive resistor comprises one or more of vanadium oxide, YBaCuO, thin-film silicon, titanium, zinc sulfide, germanium, and silicon p-n junction diode.

6. The thermal detector of claim 1, wherein the one or more electrically conducting support structures thermally isolate the infrared sensor and comprises a thermal conductance per unit surface area of the sensor below about 1 W/(Km²).

7. The thermal detector of claim 1, comprising one or more mirror structures.

8. The thermal detector of claim 1, wherein the thermal detector is tunable.

9. The thermal detector of claim 1, wherein the thermal detector comprises detectivity greater than 2×

10¹⁰ cmHz^1/2/W.

10. The thermal detector of claim 1 in combination with a narrowband filter for chemical sensing.

11. A microbolometer comprising an absorber that is spectrally selective, the absorber comprising a semiconductor absorber layer and a TCR layer, with both layers having a bandgap or absorption bands that absorbs incoming radiation in one or more of the SWIR, MWIR, and THz spectral regions more strongly than the semiconductor absorber layer absorbs incoming radiation in the LWIR spectral region.

12. The microbolometer of claim 11, wherein the semiconductor absorber layer comprises one or more of PbSe, InSb, HgCdTe, and alloys thereof.

13. The microbolometer of claim 11, wherein the TCR layer comprises one or more of VOx, Si, ZnS, ZnSe, Ge, InSb, HgCdTe, and PbSe.

14. The microbolometer of claim 11, wherein the sensor comprises a structural layer comprising ZnS.

15. A broadband thermal detector for sensing one or more of MWIR and THz radiation comprising detectivity greater than 2×

10¹⁰ cmHz^1/2/W.

16. A method of sensing infrared radiation comprising providing an absorber that is spectrally selective and selectively absorbing incoming radiation of a desired spectral wavelength region more strongly than radiation in a second spectral wavelength region that corresponds with the primary thermal emission region to provide a detectivity of the sensor greater than 2×

10¹⁰ cmHz^1/2/W.

17. The method of claim 16, wherein the desired wavelength region comprises one or more of the MWIR and THz and the primary thermal emission region comprises the LWIR.

18. The method of claim 16, comprising measuring a change in the sensor caused by the absorbed radiation.

19. The method of claim 16, wherein the step of measuring a change in the sensor includes measuring a change in the resistance of at least a portion of the sensor.

20. The method of claim 16, wherein the sensor comprises a bolometer.

21. The method of claim 16, wherein the step of measuring a change in the sensor comprises measuring a change in the thermoelectric voltage of at least a portion of the sensor.

22. The method of claim 16, wherein the sensor comprises a thermopile.