Electrode device for organic device and electronic device having the same
First Claim
1. An organic device comprising:
- a first gate electrode;
a first gate insulating film over the first gate electrode;
a first organic layer over the first gate insulating film;
an electrode over the first organic layer;
a second organic layer over the electrode;
a second gate insulating film over the second organic layer; and
a second gate electrode over the second gate insulating film,wherein the electrode comprises a metal having a work function of 4.2 eV or less, a metal having a work function of more than 4.2 eV, and an organic compound,wherein the metal having a work function of 4.2 eV or less and the organic compound are mixed in the electrode on a side in contact with the first organic layer,wherein the metal having a work function of more than 4.2 eV and the organic compound are mixed in the electrode on a side in contact with the second organic layer, andwherein a molar ratio of the metal having a work function of 4.2 eV or less and the metal having a work function of more than 4.2 eV is 1/10 or more and 10/1 or less.
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Abstract
To provide an electrode for an organic device which can be widely applied to organic devices by having both hole injection function and electron injection function. A carrier injection electrode layer 110 in which a metal for electron injection 112 (a metal having a work function of 4.2 eV or less) and a metal for hole injection 113 (a metal having a work function of more than 4.2 eV) are mixed with one kind of organic compound 111 is provided between a first organic layer 100a and a second organic layer 100b. Thus, carriers are injected into a carrier injection electrode layer 110 in the direction according to voltage application, and seemingly, current flows between an organic layer 100 and a metal electrode 101, or between the first organic layer 100a and the second organic layer 100b.
110 Citations
19 Claims
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1. An organic device comprising:
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a first gate electrode; a first gate insulating film over the first gate electrode; a first organic layer over the first gate insulating film; an electrode over the first organic layer; a second organic layer over the electrode; a second gate insulating film over the second organic layer; and a second gate electrode over the second gate insulating film, wherein the electrode comprises a metal having a work function of 4.2 eV or less, a metal having a work function of more than 4.2 eV, and an organic compound, wherein the metal having a work function of 4.2 eV or less and the organic compound are mixed in the electrode on a side in contact with the first organic layer, wherein the metal having a work function of more than 4.2 eV and the organic compound are mixed in the electrode on a side in contact with the second organic layer, and wherein a molar ratio of the metal having a work function of 4.2 eV or less and the metal having a work function of more than 4.2 eV is 1/10 or more and 10/1 or less. - View Dependent Claims (2, 3, 4, 5)
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6. An organic device comprising:
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a first gate electrode; a first gate insulating film over the first gate electrode; a first organic layer over the first gate insulating film; an electrode over the first organic layer; a second organic layer over the electrode; a second gate insulating film over the second organic layer; and a second gate electrode over the second gate insulating film, wherein a metal having a work function of 4.2 eV or less, a metal having a work function of more than 4.2 eV, and an organic compound are mixed in the electrode, and wherein a molar ratio of the metal having a work function of 4.2 eV or less and the metal having a work function of more than 4.2 eV is 1/10 or more and 10/1 or less. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. An organic device comprising:
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a first gate electrode; a first gate insulating film over the first gate electrode; a first organic layer over the first gate insulating film; an electrode over the first organic layer; a second organic layer over the electrode; a second gate insulating film over the second organic layer; and a second gate electrode over the second gate insulating film, wherein the electrode is a single layer, wherein a metal having a work function of 4.2 eV or less, a metal having a work function of more than 4.2 eV, and an organic compound are mixed in the electrode, and wherein a molar ratio of the metal having a work function of 4.2 eV or less and the metal having a work function of more than 4.2 eV is 1/10 or more and 10/1 or less. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification