Semiconductor device and manufacturing method thereof

• US 8,629,438 B2
• Filed: 05/18/2011
• Issued: 01/14/2014
• Est. Priority Date: 05/21/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Nguyen, Thinh T
• Application Number:
  US13/110,382
• Publication Number:
  US 20110284848A1
• Time in Patent Office: 972 Days
• Field of Search: 257/57, 257/43, 257/59, 257/E21.411, 257/E29.273, 438/104, 438/150, 438/158
• US Class Current: 257/57
• CPC Class Codes: H01L 21/02107 Forming insulating materials on a substrate
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02587 Structure
• CPC Class Codes: H01L 21/441 Deposition of conductive or insulating materials for electrodes
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 21/469 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques encapsulating layers H01L21/56; After-treatment of these layers
• CPC Class Codes: H01L 21/4757 After-treatment
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Disclosed is a semiconductor device including an oxide semiconductor film. A first oxide semiconductor film with a thickness of greater than or equal to 2 nm and less than or equal to 15 nm is formed over a gate insulating layer. First heat treatment is performed so that crystal growth from a surface of the first oxide semiconductor film to the inside thereof is caused, whereby a first crystal layer is formed. A second oxide semiconductor film with a thickness greater than that of the first oxide semiconductor film is formed over the first crystal layer. Second heat treatment is performed so that crystal growth from the first crystal layer to a surface of the second oxide semiconductor film is caused, whereby a second crystal layer is formed. Further, oxygen doping treatment is performed on the second crystal layer.

Claims

1. A semiconductor device comprising:

a gate insulating layer over a gate electrode layer, wherein the gate insulating layer contains a halogen element;

a first oxide semiconductor layer over the gate insulating layer, wherein the first oxide semiconductor layer includes a first crystal layer;

a second oxide semiconductor layer over and in contact with the first oxide semiconductor layer, wherein the second oxide semiconductor layer includes a second crystal layer in contact with the first crystal layer; and

a source electrode layer and a drain electrode layer over the first oxide semiconductor layer and the second oxide semiconductor layer,

wherein the first crystal layer is c-axis aligned perpendicular to a surface of the first crystal layer, and

wherein the second crystal layer is c-axis aligned perpendicular to a surface of the second crystal layer.

2. The semiconductor device according to claim 1, further comprising an insulating film over and in contact with the source electrode layer, the drain electrode layer, and the second oxide semiconductor layer.

3. The semiconductor device according to claim 1, further comprising an insulating film in contact with the second oxide semiconductor layer, wherein the insulating film includes one or more of elements selected from constituent metal elements of the second oxide semiconductor layer.

4. The semiconductor device according to claim 1, wherein the halogen element is chlorine.

5. A semiconductor device comprising:

a gate insulating layer over a gate electrode layer, wherein the gate insulating layer contains a halogen element;

a first oxide semiconductor layer over the gate insulating layer, wherein the first oxide semiconductor layer includes a first crystal layer;

a second oxide semiconductor layer over and in contact with the first oxide semiconductor layer, wherein the second oxide semiconductor layer includes a second crystal layer in contact with the first crystal layer;

a source electrode layer and a drain electrode layer over the first oxide semiconductor layer and the second oxide semiconductor layer, and

a first insulating film over and in contact with the second oxide semiconductor layer, wherein the first insulating film includes gallium,

wherein the second oxide semiconductor layer includes indium, gallium and zinc,

wherein the first crystal layer is c-axis aligned perpendicular to a surface of the first crystal layer, and

wherein the second crystal layer is c-axis aligned perpendicular to a surface of the second crystal layer.

6. The semiconductor device according to claim 5, further comprising a second insulating film over and in contact with the first insulating film, wherein the second insulating film contains oxygen.

7. The semiconductor device according to claim 5, wherein the halogen element is chlorine.

8. A semiconductor device comprising:

a gate insulating layer over a gate electrode layer, wherein the gate insulating layer contains a halogen element;

a first oxide semiconductor layer over the gate insulating layer, wherein the first oxide semiconductor layer includes a first crystal layer;

a second oxide semiconductor layer over and in contact with the first oxide semiconductor layer, wherein the second oxide semiconductor layer includes a second crystal layer in contact with the first crystal layer;

a source electrode layer and a drain electrode layer over the first oxide semiconductor layer and the second oxide semiconductor layer,

an insulating film over and in contact with the source electrode layer, the drain electrode layer, and the second oxide semiconductor layer; and

an electrode over the insulating film,

wherein the first crystal layer is c-axis aligned perpendicular to a surface of the first crystal layer, and

wherein the second crystal layer is c-axis aligned perpendicular to a surface of the second crystal layer.

9. The semiconductor device according to claim 8, wherein the insulating film includes one or more of elements selected from constituent metal elements of the second oxide semiconductor layer.

10. The semiconductor device according to claim 8, wherein the second oxide semiconductor layer includes indium, gallium and zinc.

11. The semiconductor device according to claim 10, wherein the insulating film includes gallium.

12. The semiconductor device according to claim 8, wherein the halogen element is chlorine.