Semiconductor device

• US 8,629,505 B2
• Filed: 03/21/2011
• Issued: 01/14/2014
• Est. Priority Date: 09/09/2010
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Nishiwaki, Tatsuya
• Primary Examiner(s): Stark, Jarrett
• Assistant Examiner(s): TOBERGTE, NICHOLAS J
• Application Number:
  US13/053,069
• Publication Number:
  US 20120061753A1
• Time in Patent Office: 1,030 Days
• Field of Search: 438/140, 438/454, 257/330, 257/331, 257/367, 257/E29.009, 257/E21.419
• US Class Current: 257/367
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A semiconductor device includes: a drain layer; a drift layer provided on the drain layer; a base region provided on the drift layer; a source region selectively provided on a surface of the base region; a first gate; a field-plate; a second gate; a drain electrode; and a source electrode. The first gate electrode is provided in each of a plurality of first trenches via a first insulating film. The first trenches penetrate from a surface of the source region through the base region and contact the drift layer. The field-plate electrode is provided in the first trench under the first gate electrode via a second insulating film. The second gate electrode is provided in a second trench via a third insulating film. The second trench penetrates from the surface of the source region through the base region and contacts the drift layer between the first trenches.

Claims

1. A semiconductor device comprising:

a drain layer of a first conductivity type;

a drift layer of the first conductivity type provided on the drain layer;

a base region of a second conductivity type provided on the drift layer;

a source region of the first conductivity type selectively provided on a surface of the base region;

a first gate electrode provided in each of a plurality of first trenches via a first insulating film, the first trenches penetrating from a surface of the source region through the base region and contacting the drift layer;

a field-plate electrode provided in the first trench under the first gate electrode via a second insulating film;

a second gate electrode provided in a second trench via a third insulating film, the second trench penetrating from the surface of the source region through the base region and contacting the drift layer between the first trenches;

a drain electrode connected to the drain layer; and

a source electrode connected to the source region and the base region.

2. The device according to claim 1, wherein

in the drift layer, a lower end of the first trench is located at a position deeper than a lower end of the second trench.

3. The device according to claim 1, wherein

an impurity concentration of the drift layer is not more than 1×

10¹⁷ (atoms/cm³).

4. The device according to claim 1, wherein

a pitch of the first trenches is not less than 0.6 μ

m.

5. The device according to claim 1, wherein

a plurality of the second trenches are provided between the first trenches.

6. The device according to claim 1, wherein

when viewed from a direction perpendicular to a main surface of the drift layer, the first trench and the second trench extend in a first direction.

7. The device according to claim 1, wherein

when viewed from a direction perpendicular to a main surface of the drift layer,

some of the plurality of first trenches extend in a first direction,

the other some of the plurality of first trenches extend in a second direction substantially perpendicular to the first direction, and

the some of the plurality of first trenches and the other some of the plurality of first trenches cross each other.

8. The device according to claim 7, wherein

when viewed from a direction perpendicular to a main surface of the drift layer,

the second trench is surrounded by the some of the plurality of first trenches extending in the first direction and the other some of the plurality of first trenches extending in the second direction.

9. The device according to claim 7, wherein

when viewed from a direction perpendicular to a main surface of the drift layer, a plurality of second trenches are provided,

some of the plurality of second trenches extend in a first direction,

the other some of the plurality of second trenches extend in a second direction substantially perpendicular to the first direction,

the some of the plurality of second trenches and the other some of the plurality of second trenches cross each other, and

some of the plurality of second trenches and the other some of the plurality of first trenches cross each other, and further the other some of the plurality of second trenches and some of the plurality of first trenches cross each other.

10. The device according to claim 1, wherein

when viewed from a direction perpendicular to a main surface of the drift layer, a shape of the region surrounded by the second trenches is one of a triangle, a quadrangle, a hexagon and a circle.

11. A semiconductor device comprising:

a drain layer of a first conductivity type;

a drift layer of the first conductivity type provided on the drain layer;

a drift region of a second conductivity type provided on the drift layer;

a source region of the first conductivity type provided on a surface of the base region;

a contact region provided in each of a plurality of first trenches, the first trenches penetrating from a surface of the source region through the base region and contacting the drift layer;

a field-plate electrode provided in the first trench under the contact region via a first insulating film;

a gate electrode provided in a second trench via the first insulating film, the second trench penetrating from the surface of the source region through the base region and contacting the drift layer between the first trenches;

a drain electrode connected to the drain layer; and

a source electrode connected to the source region and the contact region.

12. The device according to claim 11, wherein

in the drift layer, a lower end of the first trench is located at a position deeper than a lower end of the second trench.

13. The device according to claim 11, wherein

the contact region is connected to the field-plate electrode.

14. The device according to claim 11, wherein

an impurity concentration of the drift layer is not more than 1×

10¹⁷ (atoms/cm³).

15. The device according to claim 11, wherein

a pitch of the first trenches is not less than 0.6 μ

m.

16. The device according to claim 11, wherein

a plurality of the second trenches are provided between the first trenches.

17. The device according to claim 11, wherein

when viewed from a direction perpendicular to a main surface of the drift layer, the first trench and the second trench extend in a first direction.

18. The device according to claim 11, wherein

a plurality of the second trenches are provided between the first trenches, and

when viewed from a direction perpendicular to a main surface of the drift layer,

some of the plurality of first trenches extend in a first direction,

the other some of the plurality of first trenches extend in a second direction substantially perpendicular to the first direction, and

the some of the plurality of first trenches and the other some of the plurality of first trenches cross each other.

19. The device according to claim 18, wherein

when viewed from a direction perpendicular to a main surface of the drift layer,

the first trench is surrounded by the some of the plurality of second trenches extending in the first direction and the other some of the plurality of second trenches extending in the second direction.

20. The device according to claim 11, wherein

when viewed from a direction perpendicular to a main surface of the drift layer, a shape of the region surrounded by the second trenches is one of a triangle, a quadrangle, a hexagon and a circle.