Bulk silicon moving member with dimple
First Claim
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1. A semiconductor device, comprising:
- a substrate;
an insulator layer over the substrate, the insulator layer including two portions surrounding a cavity, at least one of the portions including a first signaling component; and
a bulk silicon layer over the insulator layer, the bulk silicon layer including three portions,wherein two of the three portions of the bulk silicon layer are over the two portions of the insulator layer, wherein one of the two portions of the bulk silicon layer includes a second signaling component to engage with the first signaling component, and wherein the third portion of the bulk silicon layer is separate from the other two portions and is disposed within the cavity;
a first dimple on the third portion of the bulk silicon layer and extending into the cavity;
a second dimple on the third portion of the bulk silicon layer and extending away from the cavity; and
a first layer over the two portions of the bulk silicon layer, but not over the third portion; and
a second layer over first layer and extending over, but not in contact with, the third portion of the bulk silicon layer.
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Abstract
A method for forming a semiconductor device includes forming a substrate, forming a moveable member of bulk silicon and forming a first dimple structure on a first surface of the moveable member, where the first surface faces the substrate.
9 Citations
18 Claims
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1. A semiconductor device, comprising:
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a substrate; an insulator layer over the substrate, the insulator layer including two portions surrounding a cavity, at least one of the portions including a first signaling component; and a bulk silicon layer over the insulator layer, the bulk silicon layer including three portions, wherein two of the three portions of the bulk silicon layer are over the two portions of the insulator layer, wherein one of the two portions of the bulk silicon layer includes a second signaling component to engage with the first signaling component, and wherein the third portion of the bulk silicon layer is separate from the other two portions and is disposed within the cavity; a first dimple on the third portion of the bulk silicon layer and extending into the cavity; a second dimple on the third portion of the bulk silicon layer and extending away from the cavity; and a first layer over the two portions of the bulk silicon layer, but not over the third portion; and a second layer over first layer and extending over, but not in contact with, the third portion of the bulk silicon layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a Micro-Electro-Mechanical Systems (MEMS) device built on a substrate, the MEMS device including; an insulator layer disposed on the substrate and defining a cavity; a first signal routing layer formed within the insulator layer, the first signal routing layer comprising polysilicon; a bulk silicon layer disposed on the insulator layer and including a moveable member within the cavity, the moveable member including a polysilicon dimple within the cavity; and an upper member constraining movement of the moveable member between the substrate and the upper member. - View Dependent Claims (10, 11, 12)
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13. A semiconductor device, comprising:
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a substrate; an insulator layer over the substrate, the insulator layer including two portions surrounding a cavity, at least one of the portions including a first signaling component; and a bulk silicon layer over the insulator layer, the bulk silicon layer including three portions, wherein two of the three portions of the bulk silicon layer are over the two portions of the insulator layer, wherein one of the two portions of the bulk silicon layer includes a second signaling component to engage with the first signaling component, and wherein the third portion of the bulk silicon layer is separate from the other two portions and is disposed within the cavity; wherein the semiconductor device comprises a Micro-Electro-Mechanical Systems (MEMS) device, wherein the third portion of the bulk silicon layer is configured as a moveable member with an interposed polysilicon member forming an upper and lower dimple structure. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification