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Semiconductor structures

  • US 8,629,527 B2
  • Filed: 07/13/2011
  • Issued: 01/14/2014
  • Est. Priority Date: 05/05/2008
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a plurality of silicon pillars in a substrate; and

    a plurality of trenches isolating each silicon pillar of the plurality of silicon pillars, wherein the plurality of trenches and the plurality of silicon pillars have equal width of less than 44 nm.

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