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Method for packaging semiconductor dies having through-silicon vias

  • US 8,629,563 B2
  • Filed: 02/08/2012
  • Issued: 01/14/2014
  • Est. Priority Date: 07/16/2007
  • Status: Active Grant
First Claim
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1. A structure comprising:

  • a die comprising a through via, the through via protruding from a surface of the die, a cross-sectional area of the through via in the surface of the die being equal to a cross-sectional area of a protruding portion of the through via in a plane parallel to the surface of the die; and

    an anisotropic conducting film (ACF) adjoining the surface of the die, the protruding portion of the through via penetrating the ACF.

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