Method for packaging semiconductor dies having through-silicon vias

• US 8,629,563 B2
• Filed: 02/08/2012
• Issued: 01/14/2014
• Est. Priority Date: 07/16/2007
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Su, Chao-Yuan
• Primary Examiner(s): CHU, CHRIS C
• Application Number:
  US13/368,999
• Publication Number:
  US 20120146238A1
• Time in Patent Office: 706 Days
• Field of Search: 257/E23.18, 257/E23.181, 257/668, 257/679, 257/686, 257/698, 257/774, 257/777, 438/114, 438/118, 428/332, 428/343
• US Class Current: 257/774
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2224/03 Manufacturing methods
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/13009 Bump connector integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/27003 for holding or transferring the layer preform
• CPC Class Codes: H01L 2224/27436 Lamination of a preform, e.g. foil, sheet or layer
• CPC Class Codes: H01L 2224/29082 Two-layer arrangements
• CPC Class Codes: H01L 2224/29099 Material
• CPC Class Codes: H01L 2224/29199 Material of the matrix
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29299 Base material
• CPC Class Codes: H01L 2224/2939 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29444 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/29455 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/29499 Shape or distribution of the fillers
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 : being circular
• CPC Class Codes: H01L 2224/45099 : Material
• CPC Class Codes: H01L 2224/451 : with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48221 : the body and the item being stacked
• CPC Class Codes: H01L 2224/48227 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73257 : Bump and wire connectors
• CPC Class Codes: H01L 2224/83191 : wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/838 : Bonding techniques
• CPC Class Codes: H01L 2224/83851 : being an anisotropic conductive adhesive
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/52 : Arrangements for conducting electric current within the device in operation from one component to another , i.e. interconnections, e.g. wires, lead frames optical interconnections G02B6/00
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/27 : Manufacturing methods
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/0781 : being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: Y10T 428/26 : Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
• CPC Class Codes: Y10T 428/28 : Web or sheet containing structurally defined element or component and having an adhesive outermost layer

Abstract

Integrated circuit structures and methods are provided. According to an embodiment, a circuit structure includes a die and an anisotropic conducting film (ACF). The die comprises a through via, and the through via protrudes from a surface of the die. A cross-sectional area of the through via in the surface of the die is equal to a cross-sectional area of a protruding portion of the through via in a plane parallel to the surface of the die. The ACF adjoins the surface of the die, and the protruding portion of the through via penetrates the ACF.

Claims

1. A structure comprising:

a die comprising a through via, the through via protruding from a surface of the die, a cross-sectional area of the through via in the surface of the die being equal to a cross-sectional area of a protruding portion of the through via in a plane parallel to the surface of the die; and

an anisotropic conducting film (ACF) adjoining the surface of the die, the protruding portion of the through via penetrating the ACF.

2. The structure of claim 1 further comprising a package substrate, the ACF being between the package substrate and the die.

3. The structure of claim 2, wherein the ACF adjoins the package substrate.

4. The structure of claim 2, wherein the package substrate is selected from the group consisting essentially of a glass substrate, a bismaleimide trianzine substrate, a print circuit board, and a lead frame.

5. The structure of claim 2 further comprising a conductive layer between the package substrate and the ACF.

6. The structure of claim 2, wherein the package substrate comprises a conductive layer, and wherein the conductive layer is further electrically connected to an additional through via in the die and the through via.

7. The structure of claim 1, wherein the die is a portion of a wafer, and further comprising an ultra-violet wafer-mount tape adjoining the ACF, and wherein the ACF and the ultra-violet wafer-mount tape have sizes no smaller than the wafer.

8. The structure of claim 7, wherein the ACF and the ultra-violet wafer-mount tape are co-terminus, and are not co-terminus with the wafer.

9. A method comprising:

forming a through via through a first surface of a substrate;

after the forming the through via, causing the through via to protrude from a second surface of the substrate, the second surface of the substrate being opposite from the first surface of the substrate; and

attaching an anisotropic conducting film (ACF) to the second surface of the substrate, a protruding portion of the through via penetrating into the ACF, the ACF being a part of a wafer-mount tape.

10. The method of claim 9, wherein the causing the through via to protrude from the second surface of the substrate includes polishing the second surface of the substrate.

11. The method of claim 9 further comprising:

sawing the substrate; and

detaching singulated portions of the substrate from the wafer-mount tape, the singulated portions of the substrate having respective singulated portions of the ACF attached thereto.

12. The method of claim 9 further comprising attaching at least a portion of the substrate and at least a portion of the ACF to a package substrate, the portion of the substrate comprising the through via, the ACF being disposed between the portion of the substrate and the package substrate.

13. The method of claim 12, wherein the ACF electrically couples the through via to a feature on the package substrate.

14. The method of claim 9, wherein the wafer-mount tape comprises an ultra-violet wafer-mount tape, the ACF being on an opposite side of the wafer-mount tape than the ultra-violet wafer-mount tape.

15. The method of claim 14 further comprising detaching at least a portion of the substrate from the wafer-mount tape by exposing the ultra-violet wafer-mount tape to an ultra-violet light, at least a portion of the ACF remaining attached to the portion of the substrate.

16. The method of claim 9, wherein the wafer-mount tape comprises an electrically conductive layer, the ACF being between the substrate and the electrically conductive layer.

17. A method of forming a package structure, the method comprising:

attaching a wafer to a wafer-mount tape, the wafer-mount tape comprising an ultra-violet wafer-mount tape and an anisotropic conducting film (ACF), a first surface of the wafer being in contact with the ACF;

singulating the wafer to separate dies;

exposing the ultra-violet wafer-mount tape to an ultra-violet light;

detaching the ultra-violet wafer-mount tape from the ACF; and

mounting a die separated from the wafer onto a package substrate, the ACF being between the die and the package substrate.

18. The method of claim 17, wherein the die comprises a through via protruding out of a back surface of the die, and wherein in the step of mounting the die, the through via penetrates into the ACF.

19. The method of claim 18, wherein the die comprises a plurality of through vias, wherein at least two of the through vias protrude out of the back surface of the die for different lengths.

20. The method of claim 17, wherein the wafer-mount tape further comprises a conductive layer between the ACF and the ultra-violet wafer-mount tape, and wherein after the step of detaching the ultra-violet wafer-mount tape from the ACF, the conductive layer is attached to the ACF.