Memory architecture of 3D NOR array
First Claim
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1. A memory device, comprising:
- an integrated circuit substrate;
a plurality of stacks of semiconductor material strips extending out of the integrated circuit substrate, the plurality of stacks being ridge-shaped and including at least two semiconductor material strips separated by insulating material into different plane positions of a plurality of plane positions;
a plurality of word lines arranged orthogonally over and being conformal with the plurality of stacks;
a plurality of memory elements between surfaces of the plurality of stacks and the plurality of word lines;
a plurality of bit line structures coupled to multiple locations along each of the semiconductor material strips of the plurality of stacks; and
a plurality of source line structures coupled to multiple locations along each of the semiconductor material strips of the plurality of stacks,wherein the plurality of bit line structures and the plurality of source line structures are between adjacent ones of the plurality of word lines.
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Abstract
A 3D memory device includes a plurality of ridge-shaped stacks of memory cells. Word lines are arranged over the stacks of memory cells. Bit lines structures are coupled to multiple locations along the stacks of memory cells. Source line structures are coupled to multiple locations along each of the semiconductor material strips of the stacks. The bit line structures and the source line structures are between adjacent ones of the word lines.
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Citations
18 Claims
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1. A memory device, comprising:
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an integrated circuit substrate; a plurality of stacks of semiconductor material strips extending out of the integrated circuit substrate, the plurality of stacks being ridge-shaped and including at least two semiconductor material strips separated by insulating material into different plane positions of a plurality of plane positions; a plurality of word lines arranged orthogonally over and being conformal with the plurality of stacks; a plurality of memory elements between surfaces of the plurality of stacks and the plurality of word lines; a plurality of bit line structures coupled to multiple locations along each of the semiconductor material strips of the plurality of stacks; and a plurality of source line structures coupled to multiple locations along each of the semiconductor material strips of the plurality of stacks, wherein the plurality of bit line structures and the plurality of source line structures are between adjacent ones of the plurality of word lines. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A memory device, comprising:
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an integrated circuit substrate; a 3D array of memory cells on the integrated circuit substrate, the 3D array including stacks of NOR memory cells, the stacks of NOR memory cells in a plurality of stacks of semiconductor material strips extending out of the integrated circuit substrate, the plurality of stacks being ridge-shaped and including at least two semiconductor material strips separated by insulating material into different plane positions of a plurality of plane positions; a plurality of word lines arranged over and being conformal with the stacks of NOR memory cells; a plurality of bit lines structures coupled to multiple locations along the stacks of NOR memory cells; and a plurality of source line structures coupled to multiple locations along each of the semiconductor material strips of the plurality of stacks, wherein the plurality of bit line structures and the plurality of source line structures are between adjacent ones of the plurality of word lines. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method of manufacturing a memory device, comprising:
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providing an integrated circuit substrate; forming a plurality of stacks of semiconductor material strips extending out of the integrated circuit substrate, the plurality of stacks being ridge-shaped and including at least two semiconductor material strips separated by insulating material into different plane positions of a plurality of plane positions; forming a plurality of word lines arranged orthogonally over and being conformal with the plurality of stacks; forming a plurality of memory elements between surfaces of the plurality of stacks and the plurality of word lines; forming a plurality of bit line structures coupled to multiple locations along each of the semiconductor material strips of the plurality of stacks; and forming a plurality of source line structures coupled to multiple locations along each of the semiconductor material strips of the plurality of stacks, wherein the plurality of bit line structures and the plurality of source line structures are between adjacent ones of the plurality of word lines.
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18. A method of manufacturing a memory device, comprising:
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providing an integrated circuit substrate; forming a 3D array of memory cells on the integrated circuit substrate, the 3D array including stacks of NOR memory cells, the stacks of NOR memory cells in a plurality of stacks of semiconductor material strips extending out of the integrated circuit substrate, the plurality of stacks being ridge-shaped and including at least two semiconductor material strips separated by insulating material into different plane positions of a plurality of plane positions; forming a plurality of word lines arranged over and being conformal with the stacks of NOR memory cells; forming a plurality of bit lines structures coupled to multiple locations along the stacks of NOR memory cells; and forming a plurality of source line structures coupled to multiple locations along each of the semiconductor material strips of the plurality of stacks wherein the plurality of bit line structures and the plurality of source line structures are between adjacent ones of the plurality of word lines.
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Specification