Pulsimeter sensor using hall device

• US 8,632,471 B2
• Filed: 02/20/2007
• Issued: 01/21/2014
• Est. Priority Date: 09/01/2006
• Status: Active Grant

• Current Assignee: Seog San Hyeon
• Original Assignee: Mi Sun Kim
• Inventors: Kim, Hyeon Ho, Lee, Sang Suk, Choi, Sang Dae, An, Myoung Chone, Choi, Young Kuen, Kim, Ki Wang, Park, Dal Ho, Hwang, Do Gwun, Ahn, Soo Yong, Kim, Mi Sun, Lee, Hyun Sook
• Primary Examiner(s): Blumel, Benjamin P
• Application Number:
  US12/310,640
• Publication Number:
  US 20100179440A1
• Time in Patent Office: 2,527 Days
• Field of Search: None
• US Class Current: 600/500
• CPC Class Codes: A61B 2562/02 Details of sensors specially adapted for in-vivo measurements
• CPC Class Codes: A61B 2562/046 in a matrix array
• CPC Class Codes: A61B 5/02438 with portable devices, e.g. worn by the patient
• CPC Class Codes: A61B 5/02444 Details of sensor A61B5/02427 takes precedence

Abstract

The present invention relates to a noninvasive medical pulsimeter sensor using a hall device. By forming a pulse-sensing part array with a hall device as a magnetic sensor, over the skin-contacting part which consists of a magnetic material, the present invention increases the integrity of sensors, enables to understand the spatial characteristics of the pulse which cannot be determined by the conventional pressure sensors, minimize the time for searching the pulse, and is applicable widely to portable pulsimeters and the likes.

Claims

1. A pulsimeter sensor using a hall device, comprising:

a skin-contacting part, formed with a magnetic material to be contacted to a skin to examine the pulse;

a pulse-sensing part, located some distance over the skin-contacting part and formed with at least one hall device; and

a spatial part, located between the skin-contacting part and the pulse-sensing part.

2. The pulsimeter sensor of claim 1,

wherein the magnetic material of the skin-contacting part comprises a nano-bead type nano-magnetic particle of 10˜

100nm in diameter or a disk magnet of 1˜

3mm in diameter and 0.3˜

1mm in thickness.

3. The pulsimeter sensor of claim 2,

wherein the nano-magnetic particle and the disk magnet comprise at least one selected from the group consisting of Nd, Co, Fe₃O₄ and Fe₂O₃.

4. The pulsimeter sensor of claim 1,

wherein the magnetic material of the skin-contacting part is as ultra-thin as 1mm and less.

5. The pulsimeter sensor of claim 4,

wherein the untra-thin magnetic material of the skin-contacting part is a ribbon-type magnetic pad.

6. The pulsimeter sensor of claim 5,

wherein the magnetic field strength of the ribbon-type magnetic pad is 200˜

300 Oe at a 3mm distance.

7. The pulsimeter sensor of claim 1,

wherein the pulse-sensing part is arranged in an array type using a hall device as a unit cell and the pulse-sensing part array is packaged to correspond to “

Chon”

, “

Gwan” and

“

Cheok”

regions.

8. The pulsimeter sensor of claim 7,

wherein the pulse-sensing part array is formed by arranging arbitrary M×

N unit cells at the each region on one semiconductor substrate and making a package.

9. The pulsimeter sensor of claim 7,

wherein the pulse-sensing part array comprises 10˜

18 unit cells per the each region.

10. The pulsimeter sensor of claim 7,

wherein the spatial part further comprises a space keeping member which connects the pulse-sensing part edge to the skin-contacting part edge and put a predetermined distance between the pulse-sensing part and the skin-contacting part.

11. The pulsimeter sensor of claim 10,

wherein the space keeping member is 1˜

3mm long.

12. The pulsimeter sensor of claim 7,

wherein the pulse-sensing part comprises a voltage detecting circuit for a hall voltage detected from the each hall device.

13. The pulsimeter sensor of claim 12,

wherein the voltage detecting circuit comprises a differential circuit.

14. The pulsimeter sensor of claim 13,

wherein the voltage detecting circuit further comprises a noise filter, a signal amplifier and an output attenuator, it has a plurality of channels, and the number of the channels is as many as the number of hall devices inside the pulse-sensing part.

15. The pulsimeter sensor of claim 14,

wherein the pulse-sensing part further comprises:

a multiplexer which receives multi-signals from the voltage detecting circuit and selects one signal;

a microprocessor which controls the multiplexer in such a way that the microprocessor receives each signal from the multiplexer, makes it a packet with a predetermined resolution, and transfers it; and

a communication driver which transfers the packet digital signal input by the microprocessor to an outer image processor.

16. The pulsimeter sensor of claim 7,

wherein to the skin-contacting part, a pressure sensor is adhered separately from the magnetic materials.

17. The pulsimeter sensor of claim 2,

wherein the pulse-sensing part is arranged in an array type using a hall device as a unit cell and the pulse-sensing part array is packaged to correspond to “

Chon”

, “

Gwan” and

“

Cheok”

regions.

18. The pulsimeter sensor of claim 3,

wherein the pulse-sensing part is arranged in an array type using a hall device as a unit cell and the pulse-sensing part array is packaged to correspond to “

Chon”

, “

Gwan” and

“

Cheok”

regions.

19. The pulsimeter sensor of claim 4,

wherein the pulse-sensing part is arranged in an array type using a hall device as a unit cell and the pulse-sensing part array is packaged to correspond to “

Chon”

, “

Gwan” and

“

Cheok”

regions.

20. The pulsimeter sensor of claim 5,

wherein the pulse-sensing part is arranged in an array type using a hall device as a unit cell and the pulse-sensing part array is packaged to correspond to “

Chon”

, “

Gwan” and

“

Cheok”

regions.