Self-bootstrapping field effect diode structures and methods
First Claim
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1. A semiconductor diode comprising:
- first and second field-effect-gated current-conducting devices of opposite respective conductivity types, the first and second devices each comprising gates, sources, and drains, the first and second devices having respective sources thereof connected together, the second field-effect-gated current-conducting device further comprising a drift region and a semiconductor region formed within the drift region, the gate of the first field-effect-gated current-conducting device being connected to the semiconductor region of the drift region of the second field-effect-gated current-conducting device;
said first and second field-effect-gated current-conducting devices each having respective drain terminals, the drain terminal of the first field-effect-gated current-conducting device being connected to a first external terminal of the semiconductor diode and the drain terminal of the second field-effect-gated current-conducting device being connected to a second external terminal of the semiconductor diode, the first and second externally connected to provide anode and cathode connections of the semiconductor diode, respectively;
wherein the semiconductor diode has no external electrical connection other than the anode and cathode connections,wherein said drift region of the first field-effect-gated current-conducting device is substantially lateral, and a drift region of the second field-effect-gated current-conducting device extends vertically downward to a backside drain connection structure of the first field-effect-gated current-conducting device.
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Abstract
A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode.
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Citations
11 Claims
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1. A semiconductor diode comprising:
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first and second field-effect-gated current-conducting devices of opposite respective conductivity types, the first and second devices each comprising gates, sources, and drains, the first and second devices having respective sources thereof connected together, the second field-effect-gated current-conducting device further comprising a drift region and a semiconductor region formed within the drift region, the gate of the first field-effect-gated current-conducting device being connected to the semiconductor region of the drift region of the second field-effect-gated current-conducting device; said first and second field-effect-gated current-conducting devices each having respective drain terminals, the drain terminal of the first field-effect-gated current-conducting device being connected to a first external terminal of the semiconductor diode and the drain terminal of the second field-effect-gated current-conducting device being connected to a second external terminal of the semiconductor diode, the first and second externally connected to provide anode and cathode connections of the semiconductor diode, respectively; wherein the semiconductor diode has no external electrical connection other than the anode and cathode connections, wherein said drift region of the first field-effect-gated current-conducting device is substantially lateral, and a drift region of the second field-effect-gated current-conducting device extends vertically downward to a backside drain connection structure of the first field-effect-gated current-conducting device.
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2. A semiconductor device comprising:
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a first field-effect device of a first conductivity type, the first field-effect device comprising a first gate region, a first source region, a first drain region, a first drift region, a semiconductor region formed in the first drift region, a first conductive layer electrically connected to the first gate region, a second conductive layer electrically connected to the semiconductor region of the first drift region, and a third conductive layer electrically connected to the first source region, the first, second, and third conductive layers each being a different conductive layer; and a second field-effect device of a second conductivity type different from the first conductivity type, the second field-effect device comprising a second gate region, a second source region, and a second drain region, the second conductive layer being electrically connected to the second gate region and the third conductive layer being electrically connected to the second source region. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification