Gate dielectric of semiconductor device
First Claim
1. A method for fabricating a semiconductor device, the method comprising:
- providing a semiconductor substrate having a first, second and third device region;
forming a first dielectric layer in the first region;
thereafter, forming a second dielectric layer on the second device region;
forming a hard mask layer on the first device region on the first dielectric layer;
forming the hard mask layer on the second device region concurrently with the forming the hard mask layer on the first device region, wherein the hard mask layer is formed on the second dielectric layer;
forming a dummy gate structure on the second dielectric layer; and
subsequently, removing the dummy gate structure to form a trench overlying the second dielectric layer, and forming a high-k dielectric layer on the first, second and third device regions, wherein the high-k dielectric layer is formed on the hard mask layer on the first device region, and in the trench and on the hard mask layer on the second dielectric layer.
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Abstract
A method of fabricating a semiconductor device having a different gate structure in each of a plurality of device regions is described. The method may include a replacement gate process. The method includes forming a hard mask layer on oxide layers formed on one or more regions of the substrate. A high-k gate dielectric layer is formed on each of the first, second and third device regions. The high-k gate dielectric layer may be formed directly on the hard mask layer in a first and second device regions and directly on an interfacial layer formed in a third device region. A semiconductor device including a plurality of devices (e.g., transistors) having different gate dielectrics formed on the same substrate is also described.
16 Citations
19 Claims
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1. A method for fabricating a semiconductor device, the method comprising:
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providing a semiconductor substrate having a first, second and third device region; forming a first dielectric layer in the first region; thereafter, forming a second dielectric layer on the second device region; forming a hard mask layer on the first device region on the first dielectric layer; forming the hard mask layer on the second device region concurrently with the forming the hard mask layer on the first device region, wherein the hard mask layer is formed on the second dielectric layer; forming a dummy gate structure on the second dielectric layer; and subsequently, removing the dummy gate structure to form a trench overlying the second dielectric layer, and forming a high-k dielectric layer on the first, second and third device regions, wherein the high-k dielectric layer is formed on the hard mask layer on the first device region, and in the trench and on the hard mask layer on the second dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of fabricating a semiconductor device, the method comprising:
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forming a first oxide layer on a first device region of a semiconductor substrate; forming a second oxide layer on a second device region of the semiconductor substrate, wherein the second oxide layer differs in thickness from the first oxide layer; forming a hard mask layer on the first oxide layer and the second oxide layer; forming a dummy gate electrode on the hard mask layer in each of the first and second device regions; forming a source or drain adjacent the dummy gate electrode in the first device region and a source or drain adjacent the dummy gate electrode in the second device region; thereafter, removing each of the dummy gate electrodes, wherein the first oxide layer and the second oxide layer remain disposed on the semiconductor substrate during the removal; forming an interfacial layer in a third device region of the semiconductor substrate; after removing the dummy gate electrodes, forming a high-k gate dielectric layer on each of the first, second and third device regions, wherein the high-k gate dielectric layer is formed directly on the hard mask layer in the first and second device regions and directly on the interfacial layer in the third device region; and forming a metal gate electrode on the high-k gate dielectric layer. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method for fabricating a semiconductor device, the method comprising:
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providing a semiconductor substrate having a first, second and third device region; forming a first dielectric layer in the first region; thereafter, forming a second dielectric layer in the second region; forming a hard mask layer on the first device region over the first dielectric layer and in the second device region over the second dielectric layer; and forming a high-k dielectric layer on the first, second and third device regions, wherein the high-k dielectric layer is formed over the hard mask layer. - View Dependent Claims (17, 18, 19)
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Specification