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Trench transistor and manufacturing method of the trench transistor

  • US 8,633,539 B2
  • Filed: 06/27/2011
  • Issued: 01/21/2014
  • Est. Priority Date: 06/27/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor body including a first surface and a second surface;

    a trench structure extending into the semiconductor body from the first surface, the trench structure including a first gate electrode part and a first gate dielectric part in a first part of the trench structure, and a second gate electrode part and a second gate dielectric part in a second part of the trench structure, wherein a width of the trench structure in the first part is equal to the width of the trench structure in the second part;

    a body region adjoining the first and second gate dielectric parts at a side wall of the trench structure; and

    wherein a distance d1 between a bottom edge of the first gate dielectric part and the first surface and a distance d2 between a bottom edge of the second gate dielectric part and the first surface satisfies 50 nm<

    d1−

    d2.

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