Trench transistor and manufacturing method of the trench transistor
First Claim
1. A semiconductor device, comprising:
- a semiconductor body including a first surface and a second surface;
a trench structure extending into the semiconductor body from the first surface, the trench structure including a first gate electrode part and a first gate dielectric part in a first part of the trench structure, and a second gate electrode part and a second gate dielectric part in a second part of the trench structure, wherein a width of the trench structure in the first part is equal to the width of the trench structure in the second part;
a body region adjoining the first and second gate dielectric parts at a side wall of the trench structure; and
wherein a distance d1 between a bottom edge of the first gate dielectric part and the first surface and a distance d2 between a bottom edge of the second gate dielectric part and the first surface satisfies 50 nm<
d1−
d2.
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Accused Products
Abstract
A semiconductor device includes a semiconductor body including a first surface and a second surface. The semiconductor device further includes a trench structure extending into the semiconductor body from the first surface. The trench structure includes a first gate electrode part and a first gate dielectric part in a first part of the trench structure, and a second gate electrode part and a second gate dielectric part in a second part of the trench structure. A width of the trench structure in the first part is equal to the width of the trench structure in the second part. The semiconductor device further includes a body region adjoining the first and second gate dielectric parts at a side wall of the trench structure. A distance d1 between a bottom edge of the first gate dielectric part and the first surface and a distance d2 between a bottom edge of the second gate dielectric part and the first surface satisfies 50 nm<d1−d2.
9 Citations
21 Claims
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1. A semiconductor device, comprising:
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a semiconductor body including a first surface and a second surface; a trench structure extending into the semiconductor body from the first surface, the trench structure including a first gate electrode part and a first gate dielectric part in a first part of the trench structure, and a second gate electrode part and a second gate dielectric part in a second part of the trench structure, wherein a width of the trench structure in the first part is equal to the width of the trench structure in the second part; a body region adjoining the first and second gate dielectric parts at a side wall of the trench structure; and wherein a distance d1 between a bottom edge of the first gate dielectric part and the first surface and a distance d2 between a bottom edge of the second gate dielectric part and the first surface satisfies 50 nm<
d1−
d2. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor device, comprising:
-
a semiconductor body including a first surface and a second surface; a trench structure extending into the semiconductor body from the first surface, the trench structure including a first gate electrode part in a first part of the trench structure and a second gate electrode part in a second part of the trench structure, wherein a width of the trench structure in the first part is equal to the width of the trench structure in the second part; a body region adjoining a gate dielectric at a side wall of the trench structure; wherein a distance d1′
between a bottom edge of the first gate electrode part and the first surface is larger than a distance d2′
between a bottom edge of the second gate electrode part and the first surface; andwherein a distance d3 between the first surface and a bottom edge of the body at a lateral distance from the gate dielectric between 10 nm to 20 nm satisfies −
100 nm<
d1′
−
d3<
200 nm. - View Dependent Claims (16, 17, 18)
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19. A semiconductor device, comprising:
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a semiconductor body including a first surface and a second surface; a trench extending into the semiconductor body from the first surface, the trench including a first gate electrode part in a first part of the trench and a second gate electrode part in a second part of the trench, the first gate electrode part and the second gate electrode part being parts of one continuous gate electrode in the trench; and wherein the first gate electrode part extends deeper into the semiconductor body from the first surface than the second gate electrode part. - View Dependent Claims (20, 21)
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Specification